參數(shù)資料
型號(hào): MRF9060LR1
廠商: MOTOROLA INC
元件分類(lèi): 功率晶體管
英文描述: UHF BAND, Si, N-CHANNEL, RF POWER, MOSFET
封裝: NI-360, CASE 360B-05, 2 PIN
文件頁(yè)數(shù): 10/12頁(yè)
文件大?。?/td> 348K
代理商: MRF9060LR1
MRF9060LR1 MRF9060LSR1
MOTOROLA RF DEVICE DATA
TYPICAL CHARACTERISTICS
10
100
6
8
10
12
14
16
18
60
40
20
0
20
40
60
Pout, OUTPUT POWER (WATTS) PEP
Figure 8. Power Gain, Efficiency, and IMD
versus Output Power
,DRAIN
EFFICIENCY
(%)
h
Gps
h
VDD = 26 Vdc
IDQ = 450 mA
f1 = 945 MHz
f2 = 945.1 MHz
G
ps
,POWER
GAIN
(dB)
IMD
1
IMD,
INTERMODULA
TION
DIST
ORTION
(dBc)
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相關(guān)代理商/技術(shù)參數(shù)
參數(shù)描述
MRF9060LR1_08 制造商:FREESCALE 制造商全稱(chēng):Freescale Semiconductor, Inc 功能描述:RF Power Field Effect Transistor N-Channel Enhancement-Mode Lateral MOSFET
MRF9060LR5 功能描述:射頻MOSFET電源晶體管 60W 1GHZ RFPWR FET NI360 RoHS:否 制造商:Freescale Semiconductor 配置:Single 晶體管極性: 頻率:1800 MHz to 2000 MHz 增益:27 dB 輸出功率:100 W 汲極/源極擊穿電壓: 漏極連續(xù)電流: 閘/源擊穿電壓: 最大工作溫度: 封裝 / 箱體:NI-780-4 封裝:Tray
MRF9060LSR1 功能描述:射頻MOSFET電源晶體管 60W 945MHZ NI360S LOW AU RoHS:否 制造商:Freescale Semiconductor 配置:Single 晶體管極性: 頻率:1800 MHz to 2000 MHz 增益:27 dB 輸出功率:100 W 汲極/源極擊穿電壓: 漏極連續(xù)電流: 閘/源擊穿電壓: 最大工作溫度: 封裝 / 箱體:NI-780-4 封裝:Tray
MRF9060LSR1_08 制造商:FREESCALE 制造商全稱(chēng):Freescale Semiconductor, Inc 功能描述:RF Power Field Effect Transistor N-Channel Enhancement-Mode Lateral MOSFET
MRF9060LSR5 功能描述:射頻MOSFET電源晶體管 60W RF PWR FET NI360LS RoHS:否 制造商:Freescale Semiconductor 配置:Single 晶體管極性: 頻率:1800 MHz to 2000 MHz 增益:27 dB 輸出功率:100 W 汲極/源極擊穿電壓: 漏極連續(xù)電流: 閘/源擊穿電壓: 最大工作溫度: 封裝 / 箱體:NI-780-4 封裝:Tray