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參數(shù)資料
| 型號(hào)： | MRF9060LSR1 |
| 廠商： | MOTOROLA INC |
| 元件分類： | 功率晶體管 |
| 英文描述： | UHF BAND, Si, N-CHANNEL, RF POWER, MOSFET |
| 封裝： | NI-360S, CASE 360C-05, 3 PIN |
| 文件頁數(shù)： | 1/12頁 |
| 文件大?。?/td> | 348K |
| 代理商： | MRF9060LSR1 |
MRF9060LR1 MRF9060LSR1
MOTOROLA RF DEVICE DATA
The RF Sub-Micron MOSFET Line
RF Power Field Effect Transistors
N-Channel Enhancement-Mode Lateral MOSFETs
Designed for broadband commercial and industrial applications with frequen-
cies up to 1.0 GHz. The high gain and broadband performance of these devices
make them ideal for large-signal, common-source amplifier applications in 26
volt base station equipment.
Typical Two-Tone Performance at 945 MHz, 26 Volts
Output Power — 60 Watts PEP
Power Gain — 17 dB
Efficiency — 40%
IMD — -31 dBc
Integrated ESD Protection
Designed for Maximum Gain and Insertion Phase Flatness
Capable of Handling 10:1 VSWR, @ 26 Vdc, 945 MHz, 60 Watts CW
Output Power
Excellent Thermal Stability
Characterized with Series Equivalent Large-Signal Impedance Parameters
In Tape and Reel. R1 Suffix = 500 Units per 32 mm, 13 inch Reel.
Low Gold Plating Thickness on Leads. L Suffix Indicates 40″ Nominal.
MAXIMUM RATINGS
Rating
Symbol
Value
Unit
Drain-Source Voltage
VDSS
65
Vdc
Gate-Source Voltage
VGS
- 0.5, +15
Vdc
Total Device Dissipation @ TC = 25°C
MRF9060LR1
Derate above 25°C
MRF9060LSR1
PD
159
0.91
219
1.25
Watts
W/°C
Watts
W/°C
Storage Temperature Range
Tstg
- 65 to +150
°C
Operating Junction Temperature
TJ
200
°C
ESD PROTECTION CHARACTERISTICS
Test Conditions
Class
Human Body Model
1 (Minimum)
Machine Model
M1 (Minimum)
THERMAL CHARACTERISTICS
Characteristic
Symbol
Max
Unit
Thermal Resistance, Junction to Case
MRF9060LR1
MRF9060LSR1
RθJC
1.1
0.8
°C/W
NOTE - CAUTION - MOS devices are susceptible to damage from electrostatic charge. Reasonable precautions in handling and
packaging MOS devices should be observed.
Order this document
by MRF9060/D
MOTOROLA
SEMICONDUCTOR TECHNICAL DATA
MRF9060LR1
MRF9060LSR1
945 MHz, 60 W, 26 V
LATERAL N-CHANNEL
BROADBAND
RF POWER MOSFETs
CASE 360B-05, STYLE 1
NI-360
MRF9060LR1
CASE 360C-05, STYLE 1
NI-360S
MRF9060LSR1
Motorola, Inc. 2003
REV 7
相關(guān)PDF資料 |
PDF描述 |
|---|---|
| MRF9060LSR1 | UHF BAND, Si, N-CHANNEL, RF POWER, MOSFET |
| MRF9060MR1 | UHF BAND, Si, N-CHANNEL, RF POWER, MOSFET, TO-270AA |
| MRF9060MBR1 | UHF BAND, Si, N-CHANNEL, RF POWER, MOSFET, TO-272 |
| MRF9060NR1 | UHF BAND, Si, N-CHANNEL, RF POWER, MOSFET, TO-270AA |
| MRF9080LR3 | UHF BAND, Si, N-CHANNEL, RF POWER, MOSFET |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| MRF9060LSR1_08 | 制造商:FREESCALE 制造商全稱:Freescale Semiconductor, Inc 功能描述:RF Power Field Effect Transistor N-Channel Enhancement-Mode Lateral MOSFET |
| MRF9060LSR5 | 功能描述:射頻MOSFET電源晶體管 60W RF PWR FET NI360LS RoHS:否 制造商:Freescale Semiconductor 配置:Single 晶體管極性: 頻率:1800 MHz to 2000 MHz 增益:27 dB 輸出功率:100 W 汲極/源極擊穿電壓: 漏極連續(xù)電流: 閘/源擊穿電壓: 最大工作溫度: 封裝 / 箱體:NI-780-4 封裝:Tray |
| MRF9060MBR1 | 制造商:MOTOROLA 制造商全稱:Motorola, Inc 功能描述:The RF Sub-micron MOSFET Line RF POWER FIELD EFFECT TRANSISTORS N-channel Enhancement-mode Lateral MOSFETs |
| MRF9060MR1 | 制造商:Rochester Electronics LLC 功能描述: 制造商:Freescale Semiconductor 功能描述: |
| MRF9060NBR1 | 功能描述:IC MOSFET RF N-CHAN TO272-2 RoHS:否 類別:分離式半導(dǎo)體產(chǎn)品 >> RF FET 系列:- 產(chǎn)品目錄繪圖:MOSFET SOT-23-3 Pkg 標(biāo)準(zhǔn)包裝:3,000 系列:- 晶體管類型:N 通道 JFET 頻率:- 增益:- 電壓 - 測(cè)試:- 額定電流:30mA 噪音數(shù)據(jù):- 電流 - 測(cè)試:- 功率 - 輸出:- 電壓 - 額定:25V 封裝/外殼:TO-236-3，SC-59，SOT-23-3 供應(yīng)商設(shè)備封裝:SOT-23-3（TO-236） 包裝:帶卷 (TR) 產(chǎn)品目錄頁面:1558 (CN2011-ZH PDF) 其它名稱:MMBFJ309LT1GOSMMBFJ309LT1GOS-NDMMBFJ309LT1GOSTR |
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