參數(shù)資料
型號： MRF9030MR1_07
廠商： 飛思卡爾半導體(中國)有限公司
英文描述： RF Power Field Effect Transistors N-Channel Enhancement-Mode Lateral MOSFETs
中文描述： 射頻功率場效應晶體管N溝道增強型MOSFET的外側
文件頁數(shù)： 1/16頁
文件大小： 540K
代理商： MRF9030MR1_07
A
A
Replaced by MRF9030NR1/NBR1. There are no form, fit or function changes with this part
replacement. N suffix added to part number to indicate transition to lead-free terminations.
RF Power Field Effect Transistors
N-Channel Enhancement-Mode Lateral MOSFETs
MRF9030MR1 MRF9030MBR1
1
RF Device Data
Freescale Semiconductor
Designed for broadband commercial and industrial applications with frequen-
cies up to 1000 MHz. The high gain and broadband performance of these
devices make them ideal for large-signal, common-source amplifier applications
in 26 volt base station equipment.
Typical Performance at 945 MHz, 26 Volts
Output Power — 30 Watts PEP
Power Gain — 20 dB
Efficiency — 41% (Two Tones)
IMD — -31 dBc
Integrated ESD Protection
Capable of Handling 5:1 VSWR, @ 26 Vdc, 945 MHz, 30 Watts CW
Output Power
Excellent Thermal Stability
Characterized with Series Equivalent Large-Signal Impedance Parameters
Dual-Lead Boltdown Plastic Package Can Also Be Used As Surface
Mount.
200 C Capable Plastic Package
TO-272-2 in Tape and Reel. R1 Suffix = 500 Units per 44 mm,
13 inch Reel.
TO-270-2 in Tape and Reel. R1 Suffix = 500 Units per 24 mm,
13 inch Reel.
Table 1. Maximum Ratings
Rating
Symbol
Value
Unit
Drain-Source Voltage
V
DSS
- 0.5, +65
Vdc
Gate-Source Voltage
V
GS
- 0.5, +15
Vdc
Total Device Dissipation @ T
C
= 25
°
C
Derate above 25
°
C
P
D
139
0.93
W
W/
°
C
Storage Temperature Range
T
stg
- 65 to +150
°
C
Operating Junction Temperature
T
J
200
°
C
Table 2. Thermal Characteristics
Characteristic
Symbol
Value
Unit
Thermal Resistance, Junction to Case
R
θ
JC
1.08
°
C/W
Table 3. ESD Protection Characteristics
Test Conditions
Class
Human Body Model
1 (Minimum)
Machine Model
M2 (Minimum)
Charge Device Model
MRF9030MR1
MRF9030MBR1
C7 (Minimum)
C6 (Minimum)
Table 4. Moisture Sensitivity Level
Test Methodology
Rating
Package Peak Temperature
Unit
Per JESD 22-A113, IPC/JEDEC J-STD-020
3
260
°
C
NOTE -
CAUTION
- MOS devices are susceptible to damage from electrostatic charge. Reasonable precautions in handling and
packaging MOS devices should be observed.
MRF9030M
Rev. 9, 5/2006
Freescale Semiconductor
Technical Data
MRF9030MR1
MRF9030MBR1
945 MHz, 30 W, 26 V
LATERAL N-CHANNEL
BROADBAND
RF POWER MOSFETs
CASE 1337-03, STYLE 1
TO-272-2
PLASTIC
MRF9030MBR1
CASE 1265-08, STYLE 1
TO-270-2
PLASTIC
MRF9030MR1
Freescale Semiconductor, Inc., 2006. All rights reserved.
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相關代理商/技術參數(shù)
參數(shù)描述
MRF9030NBR1 功能描述:IC MOSFET RF N-CHAN TO272-2 RoHS:否 類別:分離式半導體產品 >> RF FET 系列:- 產品目錄繪圖:MOSFET SOT-23-3 Pkg 標準包裝:3,000 系列:- 晶體管類型:N 通道 JFET 頻率:- 增益:- 電壓 - 測試:- 額定電流:30mA 噪音數(shù)據:- 電流 - 測試:- 功率 - 輸出:- 電壓 - 額定:25V 封裝/外殼:TO-236-3，SC-59，SOT-23-3 供應商設備封裝:SOT-23-3（TO-236） 包裝:帶卷 (TR) 產品目錄頁面:1558 (CN2011-ZH PDF) 其它名稱:MMBFJ309LT1GOSMMBFJ309LT1GOS-NDMMBFJ309LT1GOSTR
MRF9030NR1 功能描述:射頻MOSFET電源晶體管 30W RF PWR FET TO-270N RoHS:否 制造商:Freescale Semiconductor 配置:Single 晶體管極性: 頻率:1800 MHz to 2000 MHz 增益:27 dB 輸出功率:100 W 汲極/源極擊穿電壓: 漏極連續(xù)電流: 閘/源擊穿電壓: 最大工作溫度: 封裝 / 箱體:NI-780-4 封裝:Tray
MRF9030NR1_06 制造商:FREESCALE 制造商全稱:Freescale Semiconductor, Inc 功能描述:RF Power Field Effect Transistors
MRF9030R1 制造商:MOTOROLA 制造商全稱:Motorola, Inc 功能描述:RF POWER FIELD EFFECT TRANSISTORS
MRF9030SR1 制造商:MOTOROLA 制造商全稱:Motorola, Inc 功能描述:RF POWER FIELD EFFECT TRANSISTORS
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