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參數(shù)資料
| 型號(hào)： | MRF9030MR1 |
| 廠商： | 飛思卡爾半導(dǎo)體(中國(guó))有限公司 |
| 英文描述： | RF Power Field Effect Transistors |
| 中文描述： | 射頻功率場(chǎng)效應(yīng)晶體管 |
| 文件頁(yè)數(shù)： | 1/12頁(yè) |
| 文件大?。?/td> | 299K |
| 代理商： | MRF9030MR1 |
MRF9030NR1 MRF9030NBR1 MRF9030MR1 MRF9030MBR1
1
RF Device Data
Freescale Semiconductor
RF Power Field Effect Transistors
N
Channel Enhancement
Mode Lateral MOSFETs
Designed for broadband commercial and industrial applications with frequen-
cies up to 1000 MHz. The high gain and broadband performance of these
devices make them ideal for large
signal, common
source amplifier applications
in 26 volt base station equipment.
Typical Performance at 945 MHz, 26 Volts
Output Power — 30 Watts PEP
Power Gain — 20 dB
Efficiency — 41% (Two Tones)
IMD —
31 dBc
Integrated ESD Protection
Capable of Handling 5:1 VSWR, @ 26 Vdc, 945 MHz, 30 Watts CW
Output Power
Excellent Thermal Stability
Characterized with Series Equivalent Large
Signal Impedance Parameters
Dual
Lead Boltdown Plastic Package Can Also Be Used As Surface
Mount.
N Suffix Indicates Lead
Free Terminations
200 C Capable Plastic Package
TO
272
2 in Tape and Reel. R1 Suffix = 500 Units per 44 mm,
13 inch Reel.
TO
270
2 in Tape and Reel. R1 Suffix = 500 Units per 24 mm,
13 inch Reel.
Table 1. Maximum Ratings
Rating
Symbol
Value
Unit
Drain
Source Voltage
V
DSS
0.5, +65
Vdc
Gate
Source Voltage
V
GS
0.5, +15
Vdc
Total Device Dissipation @ T
C
= 25
°
C
Derate above 25
°
C
P
D
139
0.93
W
W/
°
C
Storage Temperature Range
T
stg
65 to +150
°
C
Operating Junction Temperature
T
J
200
°
C
Table 2. Thermal Characteristics
Characteristic
Symbol
Value
Unit
Thermal Resistance, Junction to Case
R
θ
JC
1.08
°
C/W
Table 3. ESD Protection Characteristics
Test Conditions
Class
Human Body Model
1 (Minimum)
Machine Model
M2 (Minimum)
Charge Device Model
MRF9030NR1(MR1)
MRF9030NBR1(MBR1)
C7 (Minimum)
C6 (Minimum)
Table 4. Moisture Sensitivity Level
Test Methodology
Rating
Package Peak Temperature
Unit
Per JESD 22
A113, IPC/JEDEC J
STD
020
3
260
°
C
NOTE
CAUTION
MOS devices are susceptible to damage from electrostatic charge. Reasonable precautions in handling and
packaging MOS devices should be observed.
MRF9030M
Rev. 8, 3/2005
Freescale Semiconductor
Technical Data
MRF9030NR1
MRF9030NBR1
MRF9030MR1
MRF9030MBR1
945 MHz, 30 W, 26 V
LATERAL N
CHANNEL
BROADBAND
RF POWER MOSFETs
CASE 1337
03, STYLE 1
TO
272
2
PLASTIC
MRF9030NBR1(MBR1)
CASE 1265
08, STYLE 1
TO
270
2
PLASTIC
MRF9030NR1(MR1)
Freescale Semiconductor, Inc., 2005. All rights reserved.
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相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| MRF9030MR1_07 | 制造商:FREESCALE 制造商全稱(chēng):Freescale Semiconductor, Inc 功能描述:RF Power Field Effect Transistors N-Channel Enhancement-Mode Lateral MOSFETs |
| MRF9030NBR1 | 功能描述:IC MOSFET RF N-CHAN TO272-2 RoHS:否 類(lèi)別:分離式半導(dǎo)體產(chǎn)品 >> RF FET 系列:- 產(chǎn)品目錄繪圖:MOSFET SOT-23-3 Pkg 標(biāo)準(zhǔn)包裝:3,000 系列:- 晶體管類(lèi)型:N 通道 JFET 頻率:- 增益:- 電壓 - 測(cè)試:- 額定電流:30mA 噪音數(shù)據(jù):- 電流 - 測(cè)試:- 功率 - 輸出:- 電壓 - 額定:25V 封裝/外殼:TO-236-3，SC-59，SOT-23-3 供應(yīng)商設(shè)備封裝:SOT-23-3（TO-236） 包裝:帶卷 (TR) 產(chǎn)品目錄頁(yè)面:1558 (CN2011-ZH PDF) 其它名稱(chēng):MMBFJ309LT1GOSMMBFJ309LT1GOS-NDMMBFJ309LT1GOSTR |
| MRF9030NR1 | 功能描述:射頻MOSFET電源晶體管 30W RF PWR FET TO-270N RoHS:否 制造商:Freescale Semiconductor 配置:Single 晶體管極性: 頻率:1800 MHz to 2000 MHz 增益:27 dB 輸出功率:100 W 汲極/源極擊穿電壓: 漏極連續(xù)電流: 閘/源擊穿電壓: 最大工作溫度: 封裝 / 箱體:NI-780-4 封裝:Tray |
| MRF9030NR1_06 | 制造商:FREESCALE 制造商全稱(chēng):Freescale Semiconductor, Inc 功能描述:RF Power Field Effect Transistors |
| MRF9030R1 | 制造商:MOTOROLA 制造商全稱(chēng):Motorola, Inc 功能描述:RF POWER FIELD EFFECT TRANSISTORS |
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