參數(shù)資料
型號: MRF8S21140HR3
廠商: FREESCALE SEMICONDUCTOR INC
元件分類: 功率晶體管
英文描述: S BAND, Si, N-CHANNEL, RF POWER, MOSFET
封裝: ROHS COMPLIANT, NI-780, CASE 465-06, 2 PIN
文件頁數(shù): 8/14頁
文件大?。?/td> 214K
代理商: MRF8S21140HR3
MRF8S21140HR3 MRF8S21140HSR3
3
RF Device Data
Freescale Semiconductor
Table 4. Electrical Characteristics (TA = 25°C unless otherwise noted) (continued)
Characteristic
Symbol
Min
Typ
Max
Unit
Typical Performances (In Freescale Test Fixture, 50 ohm system) VDD = 28 Vdc, IDQ = 970 mA, 2110-2170 MHz Bandwidth
Pout @ 1 dB Compression Point, CW
P1dB
126
W
IMD Symmetry @ 55 W PEP, Pout where IMD Third Order
Intermodulation
` 30 dBc (Delta IMD Third Order Intermodulation
between Upper and Lower Sidebands > 2 dB)
IMDsym
10
MHz
VBW Resonance Point
(IMD Third Order Intermodulation Inflection Point)
VBWres
53
MHz
Gain Flatness in 60 MHz Bandwidth @ Pout = 34 W Avg.
GF
0.5
dB
Gain Variation over Temperature
(-30
°C to +85°C)
ΔG
0.016
dB/
°C
Output Power Variation over Temperature
(-30
°C to +85°C)
ΔP1dB
0.018 (1)
dBm/
°C
1. Exceeds recommended operating conditions. See CW operation data in Maximum Ratings table.
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