參數(shù)資料
型號(hào): MRF8S21172HR3
廠商: FREESCALE SEMICONDUCTOR INC
元件分類: 功率晶體管
英文描述: S BAND, Si, N-CHANNEL, RF POWER, MOSFET
封裝: ROHS COMPLIANT, NI-780, CASE 465-06, 2 PIN
文件頁數(shù): 1/14頁
文件大?。?/td> 445K
代理商: MRF8S21172HR3
MRF8S21172HR3 MRF8S21172HSR3
1
RF Device Data
Freescale Semiconductor
RF Power Field Effect Transistors
N--Channel Enhancement--Mode Lateral MOSFETs
Designed for W--CDMA and LTE base station applications with frequencies
from 2110 to 2170 MHz. Can be used in Class AB and Class C for all typical
cellular base station modulation formats.
Typical Single--Carrier W--CDMA Performance: VDD =28 Volts,IDQ =
1350 mA, Pout = 42 Watts Avg., IQ Magnitude Clipping, Channel
Bandwidth = 3.84 MHz, Input Signal PAR = 7.5 dB @ 0.01% Probability
on CCDF.
Frequency
Gps
(dB)
ηD
(%)
Output PAR
(dB)
ACPR
(dBc)
2110 MHz
17.3
32.6
5.9
--35.8
2140 MHz
17.4
32.0
6.0
--35.9
2170 MHz
17.5
31.6
5.9
--35.0
Capable of Handling 10:1 VSWR, @ 32 Vdc, 2140 MHz, 193 Watts CW
Output Power (3 dB Input Overdrive from Rated Pout)
Typical Pout @ 1 dB Compression Point
132 Watts CW
Features
100% PAR Tested for Guaranteed Output Power Capability
Characterized with Series Equivalent Large--Signal Impedance Parameters
and Common Source S--Parameters
Internally Matched for Ease of Use
Integrated ESD Protection
Greater Negative Gate--Source Voltage Range for Improved Class C Operation
Designed for Digital Predistortion Error Correction Systems
Optimized for Doherty Applications
RoHS Compliant
In Tape and Reel. R3 Suffix = 250 Units, 56 mm Tape Width, 13 inch Reel.
For R5 Tape and Reel option, see p. 13.
Table 1. Maximum Ratings
Rating
Symbol
Value
Unit
Drain--Source Voltage
VDSS
--0.5, +65
Vdc
Gate--Source Voltage
VGS
--6.0, +10
Vdc
Operating Voltage
VDD
32, +0
Vdc
Storage Temperature Range
Tstg
--65 to +150
°C
Case Operating Temperature
TC
150
°C
Operating Junction Temperature (1,2)
TJ
225
°C
CW Operation @ TC =25°C
Derate above 25°C
CW
196
0.98
W
W/°C
Table 2. Thermal Characteristics
Characteristic
Symbol
Value (2,3)
Unit
Thermal Resistance, Junction to Case
Case Temperature 71°C, 42 W CW, 28 Vdc, IDQ = 1350 mA, 2170 MHz
Case Temperature 84°C, 160 W CW(4),28Vdc,IDQ = 1350 mA, 2170 MHz
RθJC
0.41
°C/W
1. Continuous use at maximum temperature will affect MTTF.
2. MTTF calculator available at http://www.freescale.com/rf. Select Software & Tools/Development Tools/Calculators to access MTTF
calculators by product.
3. Refer to AN1955, Thermal Measurement Methodology of RF Power Amplifiers. Go to http://www.freescale.com/rf.
Select Documentation/Application Notes -- AN1955.
4. Exceeds recommended operating conditions. See CW operation data in Maximum Ratings table.
Document Number: MRF8S21172H
Rev. 0, 3/2011
Freescale Semiconductor
Technical Data
2110--2170 MHz, 42 W AVG., 28 V
W--CDMA, LTE
LATERAL N--CHANNEL
RF POWER MOSFETs
MRF8S21172HR3
MRF8S21172HSR3
CASE 465A--06, STYLE 1
NI--780S
MRF8S21172HSR3
CASE 465--06, STYLE 1
NI--780
MRF8S21172HR3
Freescale Semiconductor, Inc., 2011. All rights reserved.
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