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參數(shù)資料
| 型號： | MRF8S19140HSR3 |
| 廠商： | FREESCALE SEMICONDUCTOR INC |
| 元件分類： | 功率晶體管 |
| 英文描述： | L BAND, Si, N-CHANNEL, RF POWER, MOSFET |
| 封裝： | ROHS COMPLIANT, CASE 465A-06, NI-780, 2 PIN |
| 文件頁數(shù)： | 7/14頁 |
| 文件大?。?/td> | 402K |
| 代理商： | MRF8S19140HSR3 |
2
RF Device Data
Freescale Semiconductor
MRF8S19140HR3 MRF8S19140HSR3
Table 3. ESD Protection Characteristics
Test Methodology
Class
Human Body Model (per JESD22--A114)
2 (Minimum)
Machine Model (per EIA/JESD22--A115)
A (Minimum)
Charge Device Model (per JESD22--C101)
IV (Minimum)
Table 4. Electrical Characteristics (TA =25°C unless otherwise noted)
Characteristic
Symbol
Min
Typ
Max
Unit
Off Characteristics
Zero Gate Voltage Drain Leakage Current
(VDS =65 Vdc, VGS =0 Vdc)
IDSS
—
10
μAdc
Zero Gate Voltage Drain Leakage Current
(VDS =28 Vdc, VGS =0 Vdc)
IDSS
—
1
μAdc
Gate--Source Leakage Current
(VGS =5 Vdc, VDS =0 Vdc)
IGSS
—
1
μAdc
On Characteristics
Gate Threshold Voltage
(VDS =10 Vdc, ID = 200 μAdc)
VGS(th)
1.0
1.8
2.5
Vdc
Gate Quiescent Voltage
(VDD =28 Vdc, ID = 1100 mAdc, Measured in Functional Test)
VGS(Q)
1.9
2.6
3.4
Vdc
Drain--Source On--Voltage
(VGS =10 Vdc, ID =3 Adc)
VDS(on)
0.1
0.24
0.3
Vdc
Functional Tests (1) (In Freescale Test Fixture, 50 ohm system) VDD =28 Vdc, IDQ = 1100 mA, Pout = 34 W Avg., f = 1960 MHz,
Single--Carrier W--CDMA, IQ Magnitude Clipping, Input Signal PAR = 7.5 dB @ 0.01% Probability on CCDF. ACPR measured in 3.84 MHz
Channel Bandwidth @ ±5MHz Offset.
Power Gain
Gps
18.0
19.1
21.0
dB
Drain Efficiency
ηD
30.0
31.4
—
%
Output Peak--to--Average Ratio @ 0.01% Probability on CCDF
PAR
5.9
6.5
—
dB
Adjacent Channel Power Ratio
ACPR
—
--38.8
--37.5
dBc
Input Return Loss
IRL
—
--24
--7
dB
Typical Broadband Performance (In Freescale Test Fixture, 50 ohm system) VDD =28 Vdc, IDQ = 1100 mA, Pout =34 W Avg.,
Single--Carrier W--CDMA, IQ Magnitude Clipping, Input Signal PAR = 7.5 dB @ 0.01% Probability on CCDF. ACPR measured in 3.84 MHz
Channel Bandwidth @ ±5MHz Offset.
Frequency
Gps
(dB)
ηD
(%)
Output PAR
(dB)
ACPR
(dBc)
IRL
(dB)
1930 MHz
18.8
31.7
6.4
--38.5
--24
1960 MHz
19.1
31.4
6.5
--38.8
--24
1990 MHz
19.3
31.5
6.5
--38.8
--15
1. Part internally matched both on input and output.
(continued)
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| MRF8S19140HSR5 | 功能描述:射頻MOSFET電源晶體管 HV8 2GHZ 140W NI780HS RoHS:否 制造商:Freescale Semiconductor 配置:Single 晶體管極性: 頻率:1800 MHz to 2000 MHz 增益:27 dB 輸出功率:100 W 汲極/源極擊穿電壓: 漏極連續(xù)電流: 閘/源擊穿電壓: 最大工作溫度: 封裝 / 箱體:NI-780-4 封裝:Tray |
| MRF8S19260H | 制造商:FREESCALE 制造商全稱:Freescale Semiconductor, Inc 功能描述:RF Power Field Effect Transistors |
| MRF8S19260HR5 | 功能描述:射頻MOSFET電源晶體管 HV8 1.9GHZ 260W NI1230-8 RoHS:否 制造商:Freescale Semiconductor 配置:Single 晶體管極性: 頻率:1800 MHz to 2000 MHz 增益:27 dB 輸出功率:100 W 汲極/源極擊穿電壓: 漏極連續(xù)電流: 閘/源擊穿電壓: 最大工作溫度: 封裝 / 箱體:NI-780-4 封裝:Tray |
| MRF8S19260HR6 | 功能描述:射頻MOSFET電源晶體管 65V N-CH 1960MHz RoHS:否 制造商:Freescale Semiconductor 配置:Single 晶體管極性: 頻率:1800 MHz to 2000 MHz 增益:27 dB 輸出功率:100 W 汲極/源極擊穿電壓: 漏極連續(xù)電流: 閘/源擊穿電壓: 最大工作溫度: 封裝 / 箱體:NI-780-4 封裝:Tray |
| MRF8S19260HSR5 | 功能描述:射頻MOSFET電源晶體管 HV8 1.9GHZ 260W NI1230S8 RoHS:否 制造商:Freescale Semiconductor 配置:Single 晶體管極性: 頻率:1800 MHz to 2000 MHz 增益:27 dB 輸出功率:100 W 汲極/源極擊穿電壓: 漏極連續(xù)電流: 閘/源擊穿電壓: 最大工作溫度: 封裝 / 箱體:NI-780-4 封裝:Tray |
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