參數(shù)資料
型號(hào): MRF8S19140HSR3
廠商: FREESCALE SEMICONDUCTOR INC
元件分類(lèi): 功率晶體管
英文描述: L BAND, Si, N-CHANNEL, RF POWER, MOSFET
封裝: ROHS COMPLIANT, CASE 465A-06, NI-780, 2 PIN
文件頁(yè)數(shù): 12/14頁(yè)
文件大?。?/td> 402K
代理商: MRF8S19140HSR3
MRF8S19140HR3 MRF8S19140HSR3
7
RF Device Data
Freescale Semiconductor
VDD =28 Vdc,IDQ = 1100 mA, Pout =34 W Avg.
f
MHz
Zsource
Zload
1880
4.27 -- j3.42
1.62 -- j3.54
1900
4.33 -- j3.32
1.61 -- j3.45
1920
4.40 -- j3.22
1.61 -- j3.36
1940
4.47 -- j3.12
1.60 -- j3.27
1960
4.54 -- j3.02
1.60 -- j3.18
1980
4.61 -- j2.93
1.60 -- j3.09
2000
4.69 -- j2.84
1.59 -- j3.00
2020
4.73 -- j2.80
1.59 -- j2.96
2040
4.63 -- j2.80
1.59 -- j2.96
Zsource = Test circuit impedance as measured from
gate to ground.
Zload
= Test circuit impedance as measured from
drain to ground.
Figure 9. Series Equivalent Source and Load Impedance
Z source
Z load
Input
Matching
Network
Device
Under
Test
Output
Matching
Network
相關(guān)PDF資料
PDF描述
MRF8S19260HSR6 2 CHANNEL, L BAND, Si, N-CHANNEL, RF POWER, MOSFET
MRF8S21100HR5 S BAND, Si, N-CHANNEL, RF POWER, MOSFET
MRF8S21100HR3 S BAND, Si, N-CHANNEL, RF POWER, MOSFET
MRF8S21100HSR3 S BAND, Si, N-CHANNEL, RF POWER, MOSFET
MRF8S21120HR3 S BAND, Si, N-CHANNEL, RF POWER, MOSFET
相關(guān)代理商/技術(shù)參數(shù)
參數(shù)描述
MRF8S19140HSR5 功能描述:射頻MOSFET電源晶體管 HV8 2GHZ 140W NI780HS RoHS:否 制造商:Freescale Semiconductor 配置:Single 晶體管極性: 頻率:1800 MHz to 2000 MHz 增益:27 dB 輸出功率:100 W 汲極/源極擊穿電壓: 漏極連續(xù)電流: 閘/源擊穿電壓: 最大工作溫度: 封裝 / 箱體:NI-780-4 封裝:Tray
MRF8S19260H 制造商:FREESCALE 制造商全稱(chēng):Freescale Semiconductor, Inc 功能描述:RF Power Field Effect Transistors
MRF8S19260HR5 功能描述:射頻MOSFET電源晶體管 HV8 1.9GHZ 260W NI1230-8 RoHS:否 制造商:Freescale Semiconductor 配置:Single 晶體管極性: 頻率:1800 MHz to 2000 MHz 增益:27 dB 輸出功率:100 W 汲極/源極擊穿電壓: 漏極連續(xù)電流: 閘/源擊穿電壓: 最大工作溫度: 封裝 / 箱體:NI-780-4 封裝:Tray
MRF8S19260HR6 功能描述:射頻MOSFET電源晶體管 65V N-CH 1960MHz RoHS:否 制造商:Freescale Semiconductor 配置:Single 晶體管極性: 頻率:1800 MHz to 2000 MHz 增益:27 dB 輸出功率:100 W 汲極/源極擊穿電壓: 漏極連續(xù)電流: 閘/源擊穿電壓: 最大工作溫度: 封裝 / 箱體:NI-780-4 封裝:Tray
MRF8S19260HSR5 功能描述:射頻MOSFET電源晶體管 HV8 1.9GHZ 260W NI1230S8 RoHS:否 制造商:Freescale Semiconductor 配置:Single 晶體管極性: 頻率:1800 MHz to 2000 MHz 增益:27 dB 輸出功率:100 W 汲極/源極擊穿電壓: 漏極連續(xù)電流: 閘/源擊穿電壓: 最大工作溫度: 封裝 / 箱體:NI-780-4 封裝:Tray