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參數(shù)資料
| 型號： | MRF8P20160HR3 |
| 廠商： | FREESCALE SEMICONDUCTOR INC |
| 元件分類： | 功率晶體管 |
| 英文描述： | 2 CHANNEL, L BAND, Si, N-CHANNEL, RF POWER, MOSFET |
| 封裝： | ROHS COMPLIANT, NI-780, CASE 465M-01, 4 PIN |
| 文件頁數(shù)： | 8/17頁 |
| 文件大?。?/td> | 807K |
| 代理商： | MRF8P20160HR3 |
16
RF Device Data
Freescale Semiconductor
MRF8P20160HR3 MRF8P20160HSR3
PRODUCT DOCUMENTATION AND SOFTWARE
Refer to the following documents, tools and software to aid your design process.
Application Notes
AN1955: Thermal Measurement Methodology of RF Power Amplifiers
Engineering Bulletins
EB212: Using Data Sheet Impedances for RF LDMOS Devices
Software
Electromigration MTTF Calculator
RF High Power Model
.s2p File
For Software, do a Part Number search at http://www.freescale.com, and select the “Part Number” link. Go to the Software &
Tools tab on the part’s Product Summary page to download the respective tool.
REVISION HISTORY
The following table summarizes revisions to this document.
Revision
Date
Description
0
Apr. 2010
Initial Release of Data Sheet
1
July 2010
Added part number MRF8P20160HR3 (NI--780--4), p. 1
Corrected IDQ1A value from 554 to 550 mA in Thermal Characteristics table and changed thermal
resistance value from 0.95 to 0.75°C/W. Thermal value now reflects the use of the combined dissipated
power from the carrier amplifier and peaking amplifier, p. 2
Changed VDS(on) values from 0.05 to 0.1 Min, 0.11 to 0.27 Typ and 0.15 to 0.5 Max. Revised numbers
reflect per side measurement versus previous combined measurements, p. 2
Replaced Fig. 4, Output Peak--to--Average Ratio Compression (PARC) Broadband Performance @ Pout =
37 Watts Avg. to show a wider bandwidth capability, p. 6
Replaced Fig. 15, Output Peak--to--Average Ratio Compression (PARC) Broadband Performance @ Pout =
20 Watts Avg. to show more detailed RF performance capability, p. 11
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相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| MRF8P20160HR5 | 功能描述:DISCRETE RF FET RoHS:是 類別:分離式半導(dǎo)體產(chǎn)品 >> RF FET 系列:- 產(chǎn)品目錄繪圖:MOSFET SOT-23-3 Pkg 標(biāo)準(zhǔn)包裝:3,000 系列:- 晶體管類型:N 通道 JFET 頻率:- 增益:- 電壓 - 測試:- 額定電流:30mA 噪音數(shù)據(jù):- 電流 - 測試:- 功率 - 輸出:- 電壓 - 額定:25V 封裝/外殼:TO-236-3，SC-59，SOT-23-3 供應(yīng)商設(shè)備封裝:SOT-23-3（TO-236） 包裝:帶卷 (TR) 產(chǎn)品目錄頁面:1558 (CN2011-ZH PDF) 其它名稱:MMBFJ309LT1GOSMMBFJ309LT1GOS-NDMMBFJ309LT1GOSTR |
| MRF8P20160HSR3 | 功能描述:射頻MOSFET電源晶體管 HV8 2GHZ 160W NI780HS-4 RoHS:否 制造商:Freescale Semiconductor 配置:Single 晶體管極性: 頻率:1800 MHz to 2000 MHz 增益:27 dB 輸出功率:100 W 汲極/源極擊穿電壓: 漏極連續(xù)電流: 閘/源擊穿電壓: 最大工作溫度: 封裝 / 箱體:NI-780-4 封裝:Tray |
| MRF8P20160HSR5 | 功能描述:射頻MOSFET電源晶體管 HV8 2GHZ 160W NI780HS-4 RoHS:否 制造商:Freescale Semiconductor 配置:Single 晶體管極性: 頻率:1800 MHz to 2000 MHz 增益:27 dB 輸出功率:100 W 汲極/源極擊穿電壓: 漏極連續(xù)電流: 閘/源擊穿電壓: 最大工作溫度: 封裝 / 箱體:NI-780-4 封裝:Tray |
| MRF8P20161HSR3 | 功能描述:射頻MOSFET電源晶體管 HV8 2GHZ 161W NI780HS-4 RoHS:否 制造商:Freescale Semiconductor 配置:Single 晶體管極性: 頻率:1800 MHz to 2000 MHz 增益:27 dB 輸出功率:100 W 汲極/源極擊穿電壓: 漏極連續(xù)電流: 閘/源擊穿電壓: 最大工作溫度: 封裝 / 箱體:NI-780-4 封裝:Tray |
| MRF8P20161HSR5 | 功能描述:射頻MOSFET電源晶體管 HV8 2GHZ 161W NI780HS-4 RoHS:否 制造商:Freescale Semiconductor 配置:Single 晶體管極性: 頻率:1800 MHz to 2000 MHz 增益:27 dB 輸出功率:100 W 汲極/源極擊穿電壓: 漏極連續(xù)電流: 閘/源擊穿電壓: 最大工作溫度: 封裝 / 箱體:NI-780-4 封裝:Tray |
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