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參數(shù)資料
| 型號： | MRF8P20160HR3 |
| 廠商： | FREESCALE SEMICONDUCTOR INC |
| 元件分類： | 功率晶體管 |
| 英文描述： | 2 CHANNEL, L BAND, Si, N-CHANNEL, RF POWER, MOSFET |
| 封裝： | ROHS COMPLIANT, NI-780, CASE 465M-01, 4 PIN |
| 文件頁數(shù)： | 10/17頁 |
| 文件大?。?/td> | 807K |
| 代理商： | MRF8P20160HR3 |
2
RF Device Data
Freescale Semiconductor
MRF8P20160HR3 MRF8P20160HSR3
Table 2. Thermal Characteristics
Characteristic
Symbol
Value (1,2)
Unit
Thermal Resistance, Junction to Case
Case Temperature 81°C, 37 W CW, 28 Vdc, IDQA = 550 mA, VGSB = 1.3 Vdc, 1900 MHz
RθJC
0.75
°C/W
Table 3. ESD Protection Characteristics
Test Methodology
Class
Human Body Model (per JESD22--A114)
2 (Minimum)
Machine Model (per EIA/JESD22--A115)
A (Minimum)
Charge Device Model (per JESD22--C101)
IV (Minimum)
Table 4. Electrical Characteristics (TA =25°C unless otherwise noted)
Characteristic
Symbol
Min
Typ
Max
Unit
Off Characteristics (3)
Zero Gate Voltage Drain Leakage Current
(VDS =65 Vdc, VGS =0 Vdc)
IDSS
—
10
μAdc
Zero Gate Voltage Drain Leakage Current
(VDS =28 Vdc, VGS =0 Vdc)
IDSS
—
1
μAdc
Gate--Source Leakage Current
(VGS =5 Vdc, VDS =0 Vdc)
IGSS
—
1
μAdc
On Characteristics (3)
Gate Threshold Voltage
(VDS =10 Vdc, ID =116 μAdc)
VGS(th)
1.2
1.8
2.7
Vdc
Gate Quiescent Voltage
(VDD =28 Vdc, IDA = 550 mAdc, Measured in Functional Test)
VGS(Q)
1.9
2.7
3.4
Vdc
Drain--Source On--Voltage
(VGS =10 Vdc, ID =1.5 Adc)
VDS(on)
0.1
0.27
0.5
Vdc
Functional Tests (4,5) (In Freescale Doherty Test Fixture, 50 ohm system) VDD =28 Vdc, IDQA = 550 mA, VGSB =1.6 Vdc, Pout =37 W Avg.,
f = 1920 MHz, Single--Carrier W--CDMA
, IQ Magnitude Clipping, Input Signal PAR = 9.9 dB @ 0.01% Probability on CCDF. ACPR
measured in 3.84 MHz Channel Bandwidth @ ±5MHz Offset.
Power Gain
Gps
15.5
16.5
18.5
dB
Drain Efficiency
ηD
43.5
45.8
—
%
Output Peak--to--Average Ratio @ 0.01% Probability on CCDF
PAR
6.4
6.9
—
dB
Adjacent Channel Power Ratio
ACPR
—
--30.6
--28.5
dBc
Typical Broadband Performance (5) (In Freescale Doherty Test Fixture, 50 ohm system) VDD =28 Vdc, IDQA = 550 mA, VGSB =1.6 Vdc,
Pout = 37 W Avg., f = 1920 MHz, Single--Carrier W--CDMA, IQ Magnitude Clipping, Input Signal PAR = 9.9 dB @ 0.01% Probability on
CCDF. ACPR measured in 3.84 MHz Channel Bandwidth @ ±5MHz Offset.
Frequency
Gps
(dB)
ηD
(%)
Output PAR
(dB)
ACPR
(dBc)
1880 MHz
16.5
44.8
7.0
--29.8
1900 MHz
16.6
45.3
6.9
--30.1
1920 MHz
16.5
45.8
6.9
--30.6
1. MTTF calculator available at http://www.freescale.com/rf. Select Software & Tools/Development Tools/Calculators to access MTTF
calculators by product.
2. Refer to AN1955, Thermal Measurement Methodology of RF Power Amplifiers. Go to http://www.freescale.com/rf.
Select Documentation/Application Notes -- AN1955.
3. Each side of device measured separately.
4. Part internally matched both on input and output.
5. Measurement made with device in a Symmetrical Doherty configuration.
(continued)
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| MRF8P20160HR5 | 功能描述:DISCRETE RF FET RoHS:是 類別:分離式半導體產(chǎn)品 >> RF FET 系列:- 產(chǎn)品目錄繪圖:MOSFET SOT-23-3 Pkg 標準包裝:3,000 系列:- 晶體管類型:N 通道 JFET 頻率:- 增益:- 電壓 - 測試:- 額定電流:30mA 噪音數(shù)據(jù):- 電流 - 測試:- 功率 - 輸出:- 電壓 - 額定:25V 封裝/外殼:TO-236-3，SC-59，SOT-23-3 供應商設備封裝:SOT-23-3（TO-236） 包裝:帶卷 (TR) 產(chǎn)品目錄頁面:1558 (CN2011-ZH PDF) 其它名稱:MMBFJ309LT1GOSMMBFJ309LT1GOS-NDMMBFJ309LT1GOSTR |
| MRF8P20160HSR3 | 功能描述:射頻MOSFET電源晶體管 HV8 2GHZ 160W NI780HS-4 RoHS:否 制造商:Freescale Semiconductor 配置:Single 晶體管極性: 頻率:1800 MHz to 2000 MHz 增益:27 dB 輸出功率:100 W 汲極/源極擊穿電壓: 漏極連續(xù)電流: 閘/源擊穿電壓: 最大工作溫度: 封裝 / 箱體:NI-780-4 封裝:Tray |
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