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參數(shù)資料
| 型號(hào)： | MRF838A |
| 廠商： | ADVANCED SEMICONDUCTOR INC |
| 元件分類： | 小信號(hào)晶體管 |
| 英文描述： | 14 pin DIP, 5.0 Volt, HCMOS/TTL, Clock Oscillator |
| 中文描述： | UHF BAND, Si, NPN, RF SMALL SIGNAL TRANSISTOR |
| 文件頁數(shù)： | 1/1頁 |
| 文件大小： | 14K |
| 代理商： | MRF838A |
A D V A N C E D S E M I C O N D U C T O R, I N C.
REV. A
7525 ETHEL AVENUE
NORTH HOLLYWOOD, CA 91605
(818) 982-1200
FAX (818) 765-3004 1/1
Specifications are subject to change without notice.
CHARACTERISTICS
T
C
= 25
O
C
SYMBOL
BV
CES
I
C
= 10 mA
BV
CEO
I
C
= 10 mA
BV
EBO
I
E
= 1.0 mA
h
FE
V
CE
= 5.0 V
TEST CONDITIONS
MINIMUM TYPICAL MAXIMUM
36
UNITS
V
V
V
---
18
4.0
I
C
= 150 mA
20
C
OB
V
CB
= 12.5 V
f = 1.0 MHz
7.5
pF
P
G
η
C
V
CE
= 12.5 V
P
OUT
= 1.0 W f = 870 MHz
6.5
50
7.5
dB
%
PACKAGE STYLE .205 4L STUD
NPN SILICON RF POWER TRANSISTOR
MRF838A
DESCRIPTION:
The
MRF838A
is a Common Emitter
Device Designed for Class A, B and C
Amplifier Applications up to 1.0 GHz.
FEATURES INCLUDE:
Gold Metallization
Emitter Ballasting
High Gain
MAXIMUM RATINGS
I
C
600 mA
V
CBO
36 V
P
DISS
8.75 W @ T
C
= 25
O
C
-65
O
Cto +200
O
C
-65
O
Cto +200
O
C
20
O
C/W
T
J
T
STG
θ
JC
A
B
H
E
F
.098 / 2.500
.161 / 4.100
.028 / 0.700
.976 / 24.800
.138 / 3.500
.976 / 24.800
inches / mm
MINIMUM
A
G
F
E
D
C
B
1.000 / 25.4000
.110 / 2.800
.196 / 5.000
1.000 / 25.4000
MAXIMUM
inches / mm
.031 / 0.800
C
D
H
I
J
.200 / 5.100
.425 / 10.800
.004 / 0.100
.006 / 0.150
.465 / 11.800
2.05 / 5.200
G
J
#8-32UNC
.200 / 5.100
.208 / 5.300
DIM
1
2
3
4
1 & 3 = EMITER 2 = BASE
4 = COLLECTOR
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