參數(shù)資料
型號: MRF846
廠商: ADVANCED SEMICONDUCTOR INC
元件分類: 功率晶體管
英文描述: 14 pin DIP, 5.0 Volt, HCMOS/TTL, Clock Oscillator
中文描述: UHF BAND, Si, NPN, RF POWER TRANSISTOR
封裝: FM-6
文件頁數(shù): 1/1頁
文件大?。?/td> 14K
代理商: MRF846
A D V A N C E D S E M I C O N D U C T O R, I N C.
REV. A
7525 ETHEL AVENUE
NORTH HOLLYWOOD, CA 91605
(818) 982-1200
FAX (818) 765-3004 1/1
Specifications are subject to change without notice.
CHARACTERISTICS
T
C
= 25 °C
SYMBOL
BV
CES
I
C
= 50 mA
BV
CEO
I
C
= 50 mA
BV
EBO
I
E
= 100 mA
I
CBO
V
CE
= 15 V
h
FE
V
CE
= 5.0 V I
C
= 2.0 mA
TEST CONDITIONS
MINIMUM TYPICAL MAXIMUM
36
UNITS
V
V
V
mA
---
16
4.0
10
10
150
C
OB
V
CB
= 12.5 V
f = 1.0 MHz
85
100
pF
P
G
η
C
V
CE
= 12.5 V I
CQ
= 50mA P
OUT
= 40 W
f = 870 MHz
4.3
50
5.2
55
dB
%
NPN SILICON RF POWER TRANSISTOR
MRF846
DESCRIPTION:
The
MRF846
is Designed for UFH
Large-Signal, Common Base Amplifier
Applicatons Up to 960 MHz.
FEATURES INCLUDE:
Input Matching Network
Min Gain 4.3 dB
Gold Metalization
MAXIMUM RATINGS
I
C
14 A
V
CBO
36 V
V
CEO
16 V
P
DISS
150 W @ T
C
= 25
O
C
T
J
-55
O
C to +200
O
C
T
STG
-55
O
C to +150
O
C
θ
JC
1.17
O
C/W
PACKAGE STYLE .230 6L FLG
.040x45°
MINIMUM
inches / mm
.115 / 2.92
.225 / 5.72
.075 / 1.91
.090 / 2.29
.720 / 18.29
B
C
D
E
F
G
A
MAXIMUM
inches / mm
.085 / 2.16
.110 / 2.79
.730 / 18.54
.235 / 5.97
.125 / 3.18
H
.355 / 9.02
DIM
K
L
I
J
.004 / 0.10
.120 / 3.05
.230 / 5.84
.006 / 0.15
.130 / 3.30
.260 / 6.60
K
4X .025 R
.115
I
.125
E
.430 D
H
G
F
J
C
A
B
2X.130
L
.160 / 4.06
.180 / 4.57
.980 / 24.89
.970 / 24.64
.355 / 9.02
.365 / 9.27
.365 / 9.27
1 & 3 & 4 & 6 = BASE 2 = EMITTER
5 = COLLECTOR
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