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參數(shù)資料
| 型號： | MRF901 |
| 廠商： | Advanced Semiconductor, Inc. |
| 英文描述： | NPN SILICON RF TRANSISTOR |
| 中文描述： | NPN硅射頻晶體管 |
| 文件頁數(shù)： | 1/1頁 |
| 文件大小： | 42K |
| 代理商： | MRF901 |
A D V A N C E D S E M I C O N D U C T O R, I N C.
REV. A
7525 ETHEL AVENUE
NORTH HOLLYWOOD, CA 91605
(818) 982-1200
FAX (818) 765-3004 1/1
Specifications are subject to change without notice.
CHARACTERISTICS
T
C
= 25 °C
SYMBOL
BV
CBO
I
C
= 0.1 mA
BV
CEO
I
C
= 1.0 mA
BV
EBO
I
E
= 0.1 mA
I
CBO
V
CB
= 15 V
h
FE
V
CE
= 5.0 V I
C
= 5.0 mA
NONE
TEST CONDITIONS
MINIMUM TYPICAL MAXIMUM
25
15
2.0
30
80
UNITS
V
V
V
nA
---
50
200
C
cb
f
T
V
CB
= 10 V
V
CE
= 10 V I
C
= 15 mA f = 1.0 GHz
f = 1.0 MHz
0.40
1.0
pF
GHz
4.5
NF
MIN
V
CE
= 6.0 V I
C
= 15 mA f = 1.0 GHz
2.0
2.5
dB
NPN SILICON RF TRANSISTOR
MRF901
DESCRIPTION:
The
ASI
MRF901
is Designed for high
gain. Low noise small-signal amplifiers.
Applications up to 2.5 GHz.
FEATURES:
Low Noise Figure
High Gain
Common Emitter
MAXIMUM RATINGS
I
C
V
CBO
V
CEO
V
EBO
P
DISS
0.375 W @ T
C
= 75 °C
T
J
-55 °C to +150 °C
T
STG
-55 °C to +150 °C
θ
JC
30 mA
25 V
15 V
2.0 V
200 °C/W
PACKAGE STYLE
Dim. Are in mm
Leads 1 and 3 = Emitter 2 = Collector 4 = Base
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