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參數(shù)資料
| 型號： | MRF837 |
| 廠商： | ADVANCED SEMICONDUCTOR INC |
| 元件分類： | 小信號晶體管 |
| 英文描述： | NPN SILICON RF LOW POWER TRANSISTOR |
| 中文描述： | UHF BAND, Si, NPN, RF SMALL SIGNAL TRANSISTOR |
| 封裝： | MACRO-X-3 |
| 文件頁數(shù)： | 1/1頁 |
| 文件大?。?/td> | 25K |
| 代理商： | MRF837 |
A D V A N C E D S E M I C O N D U C T O R, I N C.
REV. A
7525 ETHEL AVENUE
NORTH HOLLYWOOD, CA 91605
(818) 982-1200
FAX (818) 765-3004 1/1
Specifications are subject to change without notice.
CHARACTERISTICS
T
C
= 25 °C
SYMBOL
BV
CES
I
C
= 5.0 mA
BV
CEO
I
C
= 5.0 mA
BV
EBO
I
E
= 100 μA
I
CES
V
CE
= 15 V
h
FE
V
CE
= 10 V
TEST CONDITIONS
MINIMUM TYPICAL MAXIMUM
36
UNITS
V
V
V
μA
---
16
4.0
100
I
C
= 50 mA
30
200
C
OB
V
CB
= 15 V
f = 1.0 MHz
1.8
2.5
pF
P
G
η
C
V
CE
= 12.5 V P
OUT
= 0.75 W f = 870 MHz
8.0
55
10
60
dB
%
PACKAGE STYLE MACRO-X
MILLIMETERS
INCHES
DIM
MIN
MAX
MIN
MAX
A
4.44
5.21
0.175
0.205
C
1.90
2.54
0.075
0.100
D
0.84
0.99
0.033
0.039
F
0.20
0.30
0.008
0.012
G
0.76
0.14
0.030
0.045
K
7.24
8.13
0.285
0.320
L
10.54
11.43
0.415
0.450
N
---
1.65
---
0.065
NPN SILICON RF LOW POWER TRANSISTOR
MRF837
DESCRIPTION:
The
ASI MRF837
is Designed primerily
for wideband large signal predriver
stages in 800 MHz and UHF frequency
ranges.
FEATURES INCLUDE:
Min gain 8.0 dB @ 750 mW/870 MHz
Silicon Nitride passivated
Low cost Plastic Package
MAXIMUM RATINGS
I
C
200 mA
V
CBO
36 V
P
DISS
1.0 W @ T
C
= 25 °C
T
J
-65 °Cto +150 °C
T
STG
-65 °Cto +150 °C
θ
JC
40 °C/W
1 = COLLECTOR 2 =EMITER
3 = BASE
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相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| MRF8372 | 制造商:MOTOROLA 制造商全稱:Motorola, Inc 功能描述:RF LOW POWER TRANSISTOR NPN SILICON |
| MRF8372G | 制造商:Microsemi Corporation 功能描述:MRF8372G - Bulk 制造商:Microsemi Corporation 功能描述:RF POWER TRANSISTOR BIPOLAR/HBT |
| MRF8372GR1 | 制造商:Microsemi Corporation 功能描述:MRF8372GR1 - Bulk 制造商:Microsemi Corporation 功能描述:RF POWER TRANSISTOR BIPOLAR/HBT 制造商:Microsemi 功能描述:Trans GP BJT NPN 16V 0.2A 8-Pin SO T/R |
| MRF8372GR2 | 制造商:Microsemi Corporation 功能描述:MRF8372GR2 - Bulk |
| MRF8372LF | 功能描述:射頻放大器 RF Bipolar Trans RoHS:否 制造商:Skyworks Solutions, Inc. 類型:Low Noise Amplifier 工作頻率:2.3 GHz to 2.8 GHz P1dB:18.5 dBm 輸出截獲點:37.5 dBm 功率增益類型:32 dB 噪聲系數(shù):0.85 dB 工作電源電壓:5 V 電源電流:125 mA 測試頻率:2.6 GHz 最大工作溫度:+ 85 C 安裝風(fēng)格:SMD/SMT 封裝 / 箱體:QFN-16 封裝:Reel |
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