參數(shù)資料
型號(hào)： MRF7S19120NR1
廠商： FREESCALE SEMICONDUCTOR INC
元件分類： 功率晶體管
英文描述： L BAND, Si, N-CHANNEL, RF POWER, MOSFET, TO-270
封裝： ROHS COMPLIANT, PLASTIC, CASE 1730-02, WBL-4, 4 PIN
文件頁(yè)數(shù)： 7/14頁(yè)
文件大?。?/td> 512K
代理商： MRF7S19120NR1
2
RF Device Data
Freescale Semiconductor
MRF7S19120NR1
Table 3. ESD Protection Characteristics
Test Methodology
Class
Human Body Model (per JESD22-A114)
2 (Minimum)
Machine Model (per EIA/JESD22-A115)
A (Minimum)
Charge Device Model (per JESD22-C101)
III (Minimum)
Table 4. Moisture Sensitivity Level
Test Methodology
Rating
Package Peak Temperature
Unit
Per JESD22-A113, IPC/JEDEC J-STD-020
3
260
°C
Table 5. Electrical Characteristics (TA = 25°C unless otherwise noted)
Characteristic
Symbol
Min
Typ
Max
Unit
Off Characteristics
Zero Gate Voltage Drain Leakage Current
(VDS = 65 Vdc, VGS = 0 Vdc)
IDSS
—
10
μAdc
Zero Gate Voltage Drain Leakage Current
(VDS = 28 Vdc, VGS = 0 Vdc)
IDSS
—
1
μAdc
Gate-Source Leakage Current
(VGS = 5 Vdc, VDS = 0 Vdc)
IGSS
—
1
μAdc
On Characteristics
Gate Threshold Voltage
(VDS = 10 Vdc, ID = 270 μAdc)
VGS(th)
1.2
2
2.7
Vdc
Gate Quiescent Voltage
(VDD = 28 Vdc, ID = 1200 mAdc, Measured in Functional Test)
VGS(Q)
2
2.7
3.5
Vdc
Drain-Source On-Voltage
(VGS = 10 Vdc, ID = 2.7 Adc)
VDS(on)
0.15
0.275
0.35
Vdc
Dynamic Characteristics (1)
Reverse Transfer Capacitance
(VDS = 28 Vdc ± 30 mV(rms)ac @ 1 MHz, VGS = 0 Vdc)
Crss
—
1.65
—
pF
Output Capacitance
(VDS = 28 Vdc ± 30 mV(rms)ac @ 1 MHz, VGS = 0 Vdc)
Coss
—
600
—
pF
Input Capacitance
(VDS = 28 Vdc, VGS = 0 Vdc ± 30 mV(rms)ac @ 1 MHz)
Ciss
—
1.03
—
pF
Functional Tests (In Freescale Test Fixture, 50 ohm system) VDD = 28 Vdc, IDQ = 1200 mA, Pout = 36 W Avg., f = 1930 MHz and f =
1990 MHz, Single-Carrier W-CDMA, IQ Magnitude Clipping, Input Signal PAR = 7.5 dB @ 0.01% Probability on CCDF. ACPR measured in
3.84 MHz Channel Bandwidth @
±5 MHz Offset.
Power Gain
Gps
16.5
18
19.5
dB
Drain Efficiency
ηD
30
32
36
%
Output Peak-to-Average Ratio @ 0.01% Probability on CCDF
PAR
5.7
6.1
—
dB
Adjacent Channel Power Ratio
ACPR
—
-38.5
-35.5
dBc
Input Return Loss
IRL
—
-10
-7
dB
1. Part internally matched both on input and output.
(continued)
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相關(guān)代理商/技術(shù)參數(shù)
參數(shù)描述
MRF7S19120NR1_09 制造商:FREESCALE 制造商全稱:Freescale Semiconductor, Inc 功能描述:RF Power Field Effect Transistor N-Channel Enhancement-Mode Lateral MOSFET
MRF7S19170HR3 功能描述:射頻MOSFET電源晶體管 HV7 1.9GHZ 50W RoHS:否 制造商:Freescale Semiconductor 配置:Single 晶體管極性: 頻率:1800 MHz to 2000 MHz 增益:27 dB 輸出功率:100 W 汲極/源極擊穿電壓: 漏極連續(xù)電流: 閘/源擊穿電壓: 最大工作溫度: 封裝 / 箱體:NI-780-4 封裝:Tray
MRF7S19170HR3_08 制造商:FREESCALE 制造商全稱:Freescale Semiconductor, Inc 功能描述:RF Power Field Effect Transistors N-Channel Enhancement-Mode Lateral MOSFETs
MRF7S19170HR5 功能描述:射頻MOSFET電源晶體管 HV7 1.9GHZ 50W RoHS:否 制造商:Freescale Semiconductor 配置:Single 晶體管極性: 頻率:1800 MHz to 2000 MHz 增益:27 dB 輸出功率:100 W 汲極/源極擊穿電壓: 漏極連續(xù)電流: 閘/源擊穿電壓: 最大工作溫度: 封裝 / 箱體:NI-780-4 封裝:Tray
MRF7S19170HS 制造商:Freescale Semiconductor 功能描述: 制造商:FREESCALE-SEMI 功能描述:
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