參數(shù)資料
型號： MRF7S19120NR1
廠商： FREESCALE SEMICONDUCTOR INC
元件分類： 功率晶體管
英文描述： L BAND, Si, N-CHANNEL, RF POWER, MOSFET, TO-270
封裝： ROHS COMPLIANT, PLASTIC, CASE 1730-02, WBL-4, 4 PIN
文件頁數(shù)： 12/14頁
文件大?。?/td> 512K
代理商： MRF7S19120NR1
MRF7S19120NR1
7
RF Device Data
Freescale Semiconductor
TYPICAL CHARACTERISTICS
Figure 7. Intermodulation Distortion Products
versus Output Power
Pout, OUTPUT POWER (WATTS) PEP
IMD,
INTERMODULA
TION
DIST
OR
TION
(dBc)
-60
-10
1
100
-40
-50
10
-30
-20
7th Order
5th Order
3rd Order
400
VDD = 28 Vdc, IDQ = 1200 mA
f1 = 1955 MHz, f2 = 1965 MHz
Two-Tone Measurements, 10 MHz Tone Spacing
Figure 8. Intermodulation Distortion Products
versus Tone Spacing
TWO-T ONE SPACING (MHz)
10
VDD = 28 Vdc, Pout = 120 W (PEP), IDQ = 1200 mA
Two-Tone Measurements
(f1 + f2)/2 = Center Frequency of 1960 MHz
IM3-U
-1 0
-2 0
-4 0
1
100
IMD,
INTERMODULA
TION
DIST
OR
TION
(dBc)
-6 0
-3 0
IM3-L
IM5-U
IM5-L
IM7-L
IM7-U
-5 0
Figure 9. Output Peak-to-Average Ratio
Compression (PARC) versus Output Power
1
Pout, OUTPUT POWER (WATTS)
-1
-3
-4
30
Actual
Ideal
0
-2
OUTPUT
COMPRESSION
A
T
THE
0.01%
PROBABILITY
ON
CCDF
(dB)
-3 dB = 57.64 W
20
40
50
60
25
50
45
40
35
30
η
D,
DRAIN
EFFICIENCY
(%)
VDD = 28 Vdc, IDQ = 1200 mA
f = 1960 MHz, Input Signal PAR = 7.5 dB
-1 dB = 32.46 W
-2 dB = 43.76 W
70
Figure 10. Digital Predistortion Correction versus
ACPR and Output Power
Pout, OUTPUT POWER (dBm)
50
-70
0
36
42
38
-3 0
-4 0
-5 0
-6 0
ACPR,
UPPER
AND
LOWER
RESUL
TS
(dBc)
44
46
Uncorrected, Upper and Lower
DPD Corrected
No Memory Correction
DPD Corrected
with Memory Correction
48
300
13
19
0
60
Pout, OUTPUT POWER (WATTS) CW
Figure 11. Power Gain and Drain Efficiency
versus CW Output Power
VDD = 28 Vdc
IDQ = 1200 mA
f = 1960 MHz
TC = -30_C
25
_C
85
_C
-30
_C
25
_C
85
_C
10
1
18
17
16
15
50
40
30
20
10
η
D,
DRAIN
EFFICIENCY
(%)
Gps
ηD
G
ps
,POWER
GAIN
(dB)
100
14
-2 0
-1 0
40
VDD = 28 Vdc, IDQ = 1200 mA, f = 1960 MHz
Single-Carrier W-CDMA, Input Signal PAR = 7.5 dB
ACPR @
±5 MHz Offset in 3.84 MHz Integrated Bandwidth
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相關(guān)代理商/技術(shù)參數(shù)
參數(shù)描述
MRF7S19120NR1_09 制造商:FREESCALE 制造商全稱:Freescale Semiconductor, Inc 功能描述:RF Power Field Effect Transistor N-Channel Enhancement-Mode Lateral MOSFET
MRF7S19170HR3 功能描述:射頻MOSFET電源晶體管 HV7 1.9GHZ 50W RoHS:否 制造商:Freescale Semiconductor 配置:Single 晶體管極性: 頻率:1800 MHz to 2000 MHz 增益:27 dB 輸出功率:100 W 汲極/源極擊穿電壓: 漏極連續(xù)電流: 閘/源擊穿電壓: 最大工作溫度: 封裝 / 箱體:NI-780-4 封裝:Tray
MRF7S19170HR3_08 制造商:FREESCALE 制造商全稱:Freescale Semiconductor, Inc 功能描述:RF Power Field Effect Transistors N-Channel Enhancement-Mode Lateral MOSFETs
MRF7S19170HR5 功能描述:射頻MOSFET電源晶體管 HV7 1.9GHZ 50W RoHS:否 制造商:Freescale Semiconductor 配置:Single 晶體管極性: 頻率:1800 MHz to 2000 MHz 增益:27 dB 輸出功率:100 W 汲極/源極擊穿電壓: 漏極連續(xù)電流: 閘/源擊穿電壓: 最大工作溫度: 封裝 / 箱體:NI-780-4 封裝:Tray
MRF7S19170HS 制造商:Freescale Semiconductor 功能描述: 制造商:FREESCALE-SEMI 功能描述:
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