參數(shù)資料
型號(hào)： MRF7S19120NR1
廠商： FREESCALE SEMICONDUCTOR INC
元件分類： 功率晶體管
英文描述： L BAND, Si, N-CHANNEL, RF POWER, MOSFET, TO-270
封裝： ROHS COMPLIANT, PLASTIC, CASE 1730-02, WBL-4, 4 PIN
文件頁(yè)數(shù)： 13/14頁(yè)
文件大?。?/td> 512K
代理商： MRF7S19120NR1
8
RF Device Data
Freescale Semiconductor
MRF7S19120NR1
TYPICAL CHARACTERISTICS
Figure 12. Power Gain versus Output Power
Pout, OUTPUT POWER (WATTS) CW
G
ps
,POWER
GAIN
(dB)
160
19
0
120
16
15
40
80
17
18
28 V
IDQ = 1200 mA
f = 1960 MHz
200
VDD = 24 V
32 V
14
13
250
108
90
TJ, JUNCTION TEMPERATURE (°C)
Figure 13. MTTF versus Junction Temperature
This above graph displays calculated MTTF in hours when the device
is operated at VDD = 28 Vdc, Pout = 36 W Avg., and ηD = 32%.
MTTF calculator available at http://www.freescale.com/rf. Select
Tools/Software/Application Software/Calculators to access the MTTF
calculators by product.
107
106
105
110
130
150
170
190
MTTF
(HOURS)
210
230
W-CDMA TEST SIGNAL
0.0001
100
0
PEAK-T O-A VERAGE (dB)
Figure 14. CCDF W-CDMA IQ Magnitude
Clipping, Single-Carrier Test Signal
10
1
0.1
0.01
0.001
24
6
8
PROBABILITY
(%)
W-CDMA. ACPR Measured in 3.84 MHz
Channel Bandwidth @
±5 MHz Offset.
Input Signal PAR = 7.5 dB @ 0.01%
Probability on CCDF
Input Signal
10
-60
-100
10
(dB)
-20
-30
-40
-50
-70
-80
-90
3.84 MHz
Channel BW
7.2
1.8
5.4
3.6
0
-1.8
-3.6
-5.4
-9
9
f, FREQUENCY (MHz)
Figure 15. Single-Carrier W-CDMA Spectrum
-7.2
-ACPR in 3.84 MHz
Integrated BW
+ACPR in 3.84 MHz
Integrated BW
-10
0
13
57
9
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相關(guān)代理商/技術(shù)參數(shù)
參數(shù)描述
MRF7S19120NR1_09 制造商:FREESCALE 制造商全稱:Freescale Semiconductor, Inc 功能描述:RF Power Field Effect Transistor N-Channel Enhancement-Mode Lateral MOSFET
MRF7S19170HR3 功能描述:射頻MOSFET電源晶體管 HV7 1.9GHZ 50W RoHS:否 制造商:Freescale Semiconductor 配置:Single 晶體管極性: 頻率:1800 MHz to 2000 MHz 增益:27 dB 輸出功率:100 W 汲極/源極擊穿電壓: 漏極連續(xù)電流: 閘/源擊穿電壓: 最大工作溫度: 封裝 / 箱體:NI-780-4 封裝:Tray
MRF7S19170HR3_08 制造商:FREESCALE 制造商全稱:Freescale Semiconductor, Inc 功能描述:RF Power Field Effect Transistors N-Channel Enhancement-Mode Lateral MOSFETs
MRF7S19170HR5 功能描述:射頻MOSFET電源晶體管 HV7 1.9GHZ 50W RoHS:否 制造商:Freescale Semiconductor 配置:Single 晶體管極性: 頻率:1800 MHz to 2000 MHz 增益:27 dB 輸出功率:100 W 汲極/源極擊穿電壓: 漏極連續(xù)電流: 閘/源擊穿電壓: 最大工作溫度: 封裝 / 箱體:NI-780-4 封裝:Tray
MRF7S19170HS 制造商:Freescale Semiconductor 功能描述: 制造商:FREESCALE-SEMI 功能描述:
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