參數(shù)資料
型號(hào)： MRF7S18125BHR3
廠商： FREESCALE SEMICONDUCTOR INC
元件分類(lèi)： 功率晶體管
英文描述： L BAND, Si, N-CHANNEL, RF POWER, MOSFET
封裝： ROHS COMPLIANT, NI-780, CASE 465-06, 2 PIN
文件頁(yè)數(shù)： 8/14頁(yè)
文件大小： 471K
代理商： MRF7S18125BHR3
MRF7S18125BHR3 MRF7S18125BHSR3
3
RF Device Data
Freescale Semiconductor
Table 4. Electrical Characteristics (TC = 25°C unless otherwise noted) (continued)
Characteristic
Symbol
Min
Typ
Max
Unit
Typical Performances (In Freescale Test Fixture, 50 ohm system) VDD = 28 Vdc, IDQ = 1100 mA, 1930-1990 MHz Bandwidth
Pout @ 1 dB Compression Point
P1dB
—
140
—
W
IMD Symmetry @ 125 W PEP, Pout where IMD Third Order
Intermodulation
` 30 dBc
(Delta IMD Third Order Intermodulation between Upper and Lower
Sidebands > 2 dB)
IMDsym
—
10
—
MHz
VBW Resonance Point
(IMD Third Order Intermodulation Inflection Point)
VBWres
—
35
—
MHz
Gain Flatness in 60 MHz Bandwidth @ Pout = 125 W CW
GF
—
1.02
—
dB
Average Deviation from Linear Phase in 60 MHz Bandwidth
@ Pout = 125 W CW
Φ
—
3.3
—
°
Average Group Delay @ Pout = 125 W CW, f = 1960 MHz
Delay
—
2.49
—
ns
Part-to-Part Insertion Phase Variation @ Pout = 125 W CW,
f = 1960 MHz, Six Sigma Window
ΔΦ
—
6.7
—
°
Gain Variation over Temperature
(-30°C to +85°C)
ΔG
—
0.016
—
dB/°C
Output Power Variation over Temperature
(-30°C to +85°C)
ΔP1dB
—
0.01
—
dBm/°C
Typical GSM EDGE Performances (In Freescale GSM EDGE Test Fixture, 50 ohm system) VDD = 28 Vdc, IDQ = 1100 mA, Pout = 57 W
Avg., 1930-1990 MHz EDGE Modulation
Power Gain
Gps
—
17
—
dB
Drain Efficiency
ηD
—
39
—
%
Error Vector Magnitude
EVM
—
2.6
—
% rms
Spectral Regrowth at 400 kHz Offset
SR1
—
-60
—
dBc
Spectral Regrowth at 600 kHz Offset
SR2
—
-74
—
dBc
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相關(guān)代理商/技術(shù)參數(shù)
參數(shù)描述
MRF7S18125BHR5 功能描述:射頻MOSFET電源晶體管 HV7 1.9GHZ CW 125W NI780 RoHS:否 制造商:Freescale Semiconductor 配置:Single 晶體管極性: 頻率:1800 MHz to 2000 MHz 增益:27 dB 輸出功率:100 W 汲極/源極擊穿電壓: 漏極連續(xù)電流: 閘/源擊穿電壓: 最大工作溫度: 封裝 / 箱體:NI-780-4 封裝:Tray
MRF7S18125BHSR3 功能描述:射頻MOSFET電源晶體管 HV7 1.9GHZ CW 125W NI780 RoHS:否 制造商:Freescale Semiconductor 配置:Single 晶體管極性: 頻率:1800 MHz to 2000 MHz 增益:27 dB 輸出功率:100 W 汲極/源極擊穿電壓: 漏極連續(xù)電流: 閘/源擊穿電壓: 最大工作溫度: 封裝 / 箱體:NI-780-4 封裝:Tray
MRF7S18125BHSR5 功能描述:射頻MOSFET電源晶體管 HV7 1.9GHZ CW 125W NI780 RoHS:否 制造商:Freescale Semiconductor 配置:Single 晶體管極性: 頻率:1800 MHz to 2000 MHz 增益:27 dB 輸出功率:100 W 汲極/源極擊穿電壓: 漏極連續(xù)電流: 閘/源擊穿電壓: 最大工作溫度: 封裝 / 箱體:NI-780-4 封裝:Tray
MRF7S18170H 制造商:FREESCALE 制造商全稱(chēng):Freescale Semiconductor, Inc 功能描述:RF Power Field Effect Transistors (N-Channel Enhancement-Mode Lateral MOSFETs)
MRF7S18170HR3 功能描述:射頻MOSFET電源晶體管 1.8GHZ HV7 WCDMA NI880H RoHS:否 制造商:Freescale Semiconductor 配置:Single 晶體管極性: 頻率:1800 MHz to 2000 MHz 增益:27 dB 輸出功率:100 W 汲極/源極擊穿電壓: 漏極連續(xù)電流: 閘/源擊穿電壓: 最大工作溫度: 封裝 / 箱體:NI-780-4 封裝:Tray
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