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參數(shù)資料
| 型號： | MRF7S18125BHR3 |
| 廠商： | FREESCALE SEMICONDUCTOR INC |
| 元件分類： | 功率晶體管 |
| 英文描述： | L BAND, Si, N-CHANNEL, RF POWER, MOSFET |
| 封裝： | ROHS COMPLIANT, NI-780, CASE 465-06, 2 PIN |
| 文件頁數(shù)： | 7/14頁 |
| 文件大小： | 471K |
| 代理商： | MRF7S18125BHR3 |
2
RF Device Data
Freescale Semiconductor
MRF7S18125BHR3 MRF7S18125BHSR3
Table 3. ESD Protection Characteristics
Test Methodology
Class
Human Body Model (per JESD22-A114)
1B (Minimum)
Machine Model (per EIA/JESD22-A115)
A (Minimum)
Charge Device Model (per JESD22-C101)
IV (Minimum)
Table 4. Electrical Characteristics (TC = 25°C unless otherwise noted)
Characteristic
Symbol
Min
Typ
Max
Unit
Off Characteristics
Zero Gate Voltage Drain Leakage Current
(VDS = 65 Vdc, VGS = 0 Vdc)
IDSS
—
10
μAdc
Zero Gate Voltage Drain Leakage Current
(VDS = 28 Vdc, VGS = 0 Vdc)
IDSS
—
1
μAdc
Gate-Source Leakage Current
(VGS = 5 Vdc, VDS = 0 Vdc)
IGSS
—
1
μAdc
On Characteristics
Gate Threshold Voltage
(VDS = 10 Vdc, ID = 316 μAdc)
VGS(th)
1.2
1.9
2.7
Vdc
Gate Quiescent Voltage
(VDS = 28 Vdc, ID = 1100 mAdc)
VGS(Q)
—
2.7
—
Vdc
Fixture Gate Quiescent Voltage (1)
(VDD = 28 Vdc, ID = 1100 mAdc, Measured in Functional Test)
VGG(Q)
4
5.3
7
Vdc
Drain-Source On-Voltage
(VGS = 10 Vdc, ID = 3.16 Adc)
VDS(on)
0.1
0.2
0.3
Vdc
Dynamic Characteristics (1)
Reverse Transfer Capacitance
(VDS = 28 Vdc ± 30 mV(rms)ac @ 1 MHz, VGS = 0 Vdc)
Crss
—
1.15
—
pF
Output Capacitance
(VDS = 28 Vdc ± 30 mV(rms)ac @ 1 MHz, VGS = 0 Vdc)
Coss
—
673
—
pF
Input Capacitance
(VDS = 28 Vdc, VGS = 0 Vdc ± 30 mV(rms)ac @ 1 MHz)
Ciss
—
309
—
pF
Functional Tests (In Freescale Test Fixture, 50 ohm system) VDD = 28 Vdc, IDQ = 1100 mA, Pout = 125 W CW, f = 1930 MHz
Power Gain
Gps
15
16.5
18
dB
Drain Efficiency
ηD
51
55
—
%
Input Return Loss
IRL
—
-12
-7
dB
1. VGG = 2 x VGS(Q). Parameter measured on Freescale Test Fixture, due to resistive divider network on the board. Refer to Test Circuit
schematic.
2. Part internally matched both on input and output.
(continued)
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相關代理商/技術參數(shù) |
參數(shù)描述 |
|---|---|
| MRF7S18125BHR5 | 功能描述:射頻MOSFET電源晶體管 HV7 1.9GHZ CW 125W NI780 RoHS:否 制造商:Freescale Semiconductor 配置:Single 晶體管極性: 頻率:1800 MHz to 2000 MHz 增益:27 dB 輸出功率:100 W 汲極/源極擊穿電壓: 漏極連續(xù)電流: 閘/源擊穿電壓: 最大工作溫度: 封裝 / 箱體:NI-780-4 封裝:Tray |
| MRF7S18125BHSR3 | 功能描述:射頻MOSFET電源晶體管 HV7 1.9GHZ CW 125W NI780 RoHS:否 制造商:Freescale Semiconductor 配置:Single 晶體管極性: 頻率:1800 MHz to 2000 MHz 增益:27 dB 輸出功率:100 W 汲極/源極擊穿電壓: 漏極連續(xù)電流: 閘/源擊穿電壓: 最大工作溫度: 封裝 / 箱體:NI-780-4 封裝:Tray |
| MRF7S18125BHSR5 | 功能描述:射頻MOSFET電源晶體管 HV7 1.9GHZ CW 125W NI780 RoHS:否 制造商:Freescale Semiconductor 配置:Single 晶體管極性: 頻率:1800 MHz to 2000 MHz 增益:27 dB 輸出功率:100 W 汲極/源極擊穿電壓: 漏極連續(xù)電流: 閘/源擊穿電壓: 最大工作溫度: 封裝 / 箱體:NI-780-4 封裝:Tray |
| MRF7S18170H | 制造商:FREESCALE 制造商全稱:Freescale Semiconductor, Inc 功能描述:RF Power Field Effect Transistors (N-Channel Enhancement-Mode Lateral MOSFETs) |
| MRF7S18170HR3 | 功能描述:射頻MOSFET電源晶體管 1.8GHZ HV7 WCDMA NI880H RoHS:否 制造商:Freescale Semiconductor 配置:Single 晶體管極性: 頻率:1800 MHz to 2000 MHz 增益:27 dB 輸出功率:100 W 汲極/源極擊穿電壓: 漏極連續(xù)電流: 閘/源擊穿電壓: 最大工作溫度: 封裝 / 箱體:NI-780-4 封裝:Tray |
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