- 您現(xiàn)在的位置：買賣IC網(wǎng) > PDF目錄98040 > MRF7S18125BHR3 (FREESCALE SEMICONDUCTOR INC) L BAND, Si, N-CHANNEL, RF POWER, MOSFET PDF資料下載
參數(shù)資料
| 型號： | MRF7S18125BHR3 |
| 廠商： | FREESCALE SEMICONDUCTOR INC |
| 元件分類： | 功率晶體管 |
| 英文描述： | L BAND, Si, N-CHANNEL, RF POWER, MOSFET |
| 封裝： | ROHS COMPLIANT, NI-780, CASE 465-06, 2 PIN |
| 文件頁數(shù)： | 11/14頁 |
| 文件大?。?/td> | 471K |
| 代理商： | MRF7S18125BHR3 |
6
RF Device Data
Freescale Semiconductor
MRF7S18125BHR3 MRF7S18125BHSR3
TYPICAL CHARACTERISTICS
η
D,
DRAIN
EFFICIENCY
(%)
G
ps
,POWER
GAIN
(dB)
IRL,
INPUT
RETURN
LOSS
(dB)
f, FREQUENCY (MHz)
15
52
Gps
18
58
17.5
57
17
56
55
53
IRL
Figure 3. Power Gain, Input Return Loss and Drain
Efficiency versus Frequency @ Pout = 125 Watts CW
13
7
9
11
19
16
54
15
17
1930
f, FREQUENCY (MHz)
Figure 4. Power Gain, Input Return Loss, EVM and Drain
Efficiency versus Frequency @ Pout = 57 Watts Avg.
Gps
17.5
0
60
IRL
17
50
40
16
30
20
15
10
G
ps
,POWER
GAIN
(dB)
EVM
EVM,
ERROR
VECT
OR
MAGNITUDE
(%
rms)
VDD = 28 Vdc, Pout = 57 W Avg.
IDQ = 1100 mA, EDGE Modulation
Pout, OUTPUT POWER (WATTS) CW
100
13
18
IDQ = 1650 mA
VDD = 28 Vdc
f = 1960 MHz
17
15
14
10
300
Figure 5. Power Gain versus Output Power
G
ps
,POWER
GAIN
(dB)
16 825 mA
1375 mA
550 mA
VDD = 28 Vdc
Pout = 125 W CW, IDQ = 1100 mA
100
60
0
0.1
10
20
30
40
50
TWOTONE SPACING (MHz)
Figure 6. Intermodulation Distortion Products
versus Two-Tone Spacing
IMD,
INTERMODULA
TION
DIST
OR
TION
(dBc)
1
IM7U
IM5U
IM5L
IM3L
IM7L
IM3U
VDD = 28 Vdc, Pout = 125 W (PEP)
IDQ = 1100 mA, TwoTone Measurements
(f1 + f2)/2 = Center Frequency of 1960 MHz
16.5
15.5
1940
1950
1960
1970
1980
1990
16.5
15.5
14.5
IRL,
INPUT
RETURN
LOSS
(dB)
15
9
11
13
21
17
19
1100 mA
10
1930
1940
1950
1960
1970
1980
1990
ηD
η
D,
DRAIN
EFFICIENCY
(%)
相關(guān)PDF資料 |
PDF描述 |
|---|---|
| MRF7S19080HSR3 | L BAND, Si, N-CHANNEL, RF POWER, MOSFET |
| MRF7S19100NR1 | L BAND, Si, N-CHANNEL, RF POWER, MOSFET, TO-270 |
| MRF7S19100NBR1 | L BAND, Si, N-CHANNEL, RF POWER, MOSFET, TO-272 |
| MRF7S19120NR1 | L BAND, Si, N-CHANNEL, RF POWER, MOSFET, TO-270 |
| MRF7S19170HR3 | L BAND, Si, N-CHANNEL, RF POWER, MOSFET |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| MRF7S18125BHR5 | 功能描述:射頻MOSFET電源晶體管 HV7 1.9GHZ CW 125W NI780 RoHS:否 制造商:Freescale Semiconductor 配置:Single 晶體管極性: 頻率:1800 MHz to 2000 MHz 增益:27 dB 輸出功率:100 W 汲極/源極擊穿電壓: 漏極連續(xù)電流: 閘/源擊穿電壓: 最大工作溫度: 封裝 / 箱體:NI-780-4 封裝:Tray |
| MRF7S18125BHSR3 | 功能描述:射頻MOSFET電源晶體管 HV7 1.9GHZ CW 125W NI780 RoHS:否 制造商:Freescale Semiconductor 配置:Single 晶體管極性: 頻率:1800 MHz to 2000 MHz 增益:27 dB 輸出功率:100 W 汲極/源極擊穿電壓: 漏極連續(xù)電流: 閘/源擊穿電壓: 最大工作溫度: 封裝 / 箱體:NI-780-4 封裝:Tray |
| MRF7S18125BHSR5 | 功能描述:射頻MOSFET電源晶體管 HV7 1.9GHZ CW 125W NI780 RoHS:否 制造商:Freescale Semiconductor 配置:Single 晶體管極性: 頻率:1800 MHz to 2000 MHz 增益:27 dB 輸出功率:100 W 汲極/源極擊穿電壓: 漏極連續(xù)電流: 閘/源擊穿電壓: 最大工作溫度: 封裝 / 箱體:NI-780-4 封裝:Tray |
| MRF7S18170H | 制造商:FREESCALE 制造商全稱:Freescale Semiconductor, Inc 功能描述:RF Power Field Effect Transistors (N-Channel Enhancement-Mode Lateral MOSFETs) |
| MRF7S18170HR3 | 功能描述:射頻MOSFET電源晶體管 1.8GHZ HV7 WCDMA NI880H RoHS:否 制造商:Freescale Semiconductor 配置:Single 晶體管極性: 頻率:1800 MHz to 2000 MHz 增益:27 dB 輸出功率:100 W 汲極/源極擊穿電壓: 漏極連續(xù)電流: 閘/源擊穿電壓: 最大工作溫度: 封裝 / 箱體:NI-780-4 封裝:Tray |
發(fā)布緊急采購，3分鐘左右您將得到回復(fù)。