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參數資料
| 型號： | MRF6S23100HR3 |
| 廠商： | FREESCALE SEMICONDUCTOR INC |
| 元件分類： | 功率晶體管 |
| 英文描述： | S BAND, Si, N-CHANNEL, RF POWER, MOSFET |
| 封裝： | ROHS COMPLIANT, NI-780, CASE 465-06, 2 PIN |
| 文件頁數： | 9/11頁 |
| 文件大小： | 411K |
| 代理商： | MRF6S23100HR3 |
MRF6S23100HR3 MRF6S23100HSR3
7
RF Device Data
Freescale Semiconductor
TYPICAL CHARACTERISTICS
Figure 12. MTTF Factor versus Junction Temperature
210
108
90
107
106
105
190
MTTF
FACT
OR
(HOURS
x
AMPS
2 )
170
150
130
110
230
250
This above graph displays calculated MTTF in hours when the device
is operated at VDD = 28 Vdc, Pout = 20 W Avg., and ηD = 23.5%.
MTTF calculator available at http://www.freescale.com/rf. Select
Software & Tools/Development Tools/Calculators to access MTTF
calculators by product.
TJ, JUNCTION TEMPERATURE (°C)
W-CDMA TEST SIGNAL
10
0.0001
100
0
PEAK-T O-A VERAGE (dB)
Figure 13. CCDF W-CDMA 3GPP, Test Model 1,
64 DPCH, 67% Clipping, Single-Carrier Test Signal
10
1
0.1
0.01
0.001
24
68
Figure 14. 2‐Carrier W‐CDMA Spectrum
f, FREQUENCY (MHz)
3.84 MHz
Channel BW
-IM3 in
3.84 MHz BW
+IM3 in
3.84 MHz BW
-ACPR in
3.84 MHz BW
+ACPR in
3.84 MHz BW
PROBABILITY
(%)
(dB)
+20
+30
0
-10
-40
-50
-60
-70
-80
-20
20
515
10
0
-5
-10
-15
-2 0
-25
25
-30
W-CDMA. ACPR Measured in 3.84 MHz Channel
Bandwidth @
±5 MHz Offset. IM3 Measured in
3.84 MHz Bandwidth @
±10 MHz Offset. PAR =
8.5 dB @ 0.01% Probability on CCDF
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相關代理商/技術參數 |
參數描述 |
|---|---|
| MRF6S23100HR3_06 | 制造商:FREESCALE 制造商全稱:Freescale Semiconductor, Inc 功能描述:RF Power Field Effect Transistors |
| MRF6S23100HR5 | 功能描述:射頻MOSFET電源晶體管 HV6 2.3GHZ 20W RoHS:否 制造商:Freescale Semiconductor 配置:Single 晶體管極性: 頻率:1800 MHz to 2000 MHz 增益:27 dB 輸出功率:100 W 汲極/源極擊穿電壓: 漏極連續(xù)電流: 閘/源擊穿電壓: 最大工作溫度: 封裝 / 箱體:NI-780-4 封裝:Tray |
| MRF6S23100HSR3 | 功能描述:射頻MOSFET電源晶體管 HV6 2.3GHZ 20W RoHS:否 制造商:Freescale Semiconductor 配置:Single 晶體管極性: 頻率:1800 MHz to 2000 MHz 增益:27 dB 輸出功率:100 W 汲極/源極擊穿電壓: 漏極連續(xù)電流: 閘/源擊穿電壓: 最大工作溫度: 封裝 / 箱體:NI-780-4 封裝:Tray |
| MRF6S23100HSR5 | 功能描述:射頻MOSFET電源晶體管 HV6 2.3GHZ 20W RoHS:否 制造商:Freescale Semiconductor 配置:Single 晶體管極性: 頻率:1800 MHz to 2000 MHz 增益:27 dB 輸出功率:100 W 汲極/源極擊穿電壓: 漏極連續(xù)電流: 閘/源擊穿電壓: 最大工作溫度: 封裝 / 箱體:NI-780-4 封裝:Tray |
| MRF6S23100HXX | 制造商:FREESCALE 制造商全稱:Freescale Semiconductor, Inc 功能描述:RF Power Dield Effect Transistors |
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