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參數(shù)資料
| 型號： | MRF6S23100HR3 |
| 廠商： | FREESCALE SEMICONDUCTOR INC |
| 元件分類： | 功率晶體管 |
| 英文描述： | S BAND, Si, N-CHANNEL, RF POWER, MOSFET |
| 封裝： | ROHS COMPLIANT, NI-780, CASE 465-06, 2 PIN |
| 文件頁數(shù)： | 7/11頁 |
| 文件大?。?/td> | 411K |
| 代理商： | MRF6S23100HR3 |
MRF6S23100HR3 MRF6S23100HSR3
5
RF Device Data
Freescale Semiconductor
TYPICAL CHARACTERISTICS
G
ps
,POWER
GAIN
(dB)
IRL,
INPUT
RETURN
LOSS
(dB)
IM3
(dBc),
ACPR
(dBc)
-24
-12
-15
-21
2400
2300
IRL
Gps
ACPR
IM3
f, FREQUENCY (MHz)
Figure 3. 2-Carrier W-CDMA Broadband Performance @ Pout = 20 Watts Avg.
2370
2360
2350
2340
2330
2320
2310
16
-43
25.4
24.8
24.2
23.6
-35
-37
-39
η
D
,DRAIN
EFFICIENCY
(%)
15.8
15.6
15.4
15.2
15
14.8
14.6
-41
-18
14.4
ηD
G
ps
,POWER
GAIN
(dB)
IRL,
INPUT
RETURN
LOSS
(dB)
IM3
(dBc),
ACPR
(dBc)
-22
-12
-16
2400
2300
IRL
Gps
ACPR
IM3
f, FREQUENCY (MHz)
Figure 4. 2-Carrier W-CDMA Broadband Performance @ Pout = 40 Watts Avg.
2370
2360
2350
2340
2330
2320
2310
15.2
-35
35.5
35
34.5
34
-27
-29
-31
η
D
,DRAIN
EFFICIENCY
(%)
15.1
15
14.9
14.8
14.7
14.6
14.5
-25
-14
3.84 MHz Channel Bandwidth
PAR = 8.5 dB @ 0.01% Probability (CCDF)
14.2
ηD
Figure 5. Two-T one Power Gain versus
Output Power
10
12
18
0.1
IDQ = 1500 mA
Pout, OUTPUT POWER (WATTS) PEP
300
G
ps
,POWER
GAIN
(dB) 16
15
13
1000 mA
750 mA
500 mA
14
100
VDD = 28 Vdc, f1 = 2345 MHz
f2 = 2355 MHz, Two-Tone Measurements
10 MHz Tone Spacing
Figure 6. Third Order Intermodulation Distortion
versus Output Power
0
0.1
10
-2 0
-3 0
-4 0
300
-70
-5 0
Pout, OUTPUT POWER (WATTS) PEP
INTERMODULA
TION
DIST
OR
TION
(dBc)
IMD,
THIRD
ORDER
100
-18
-20
2380 2390
14.4
14.3
2380 2390
35.5
-33
1250 mA
-1 0
-60
1
IDQ = 500 mA
1000 mA
750 mA
VDD = 28 Vdc
f1 = 2345 MHz, f2 = 2355 MHz
Two-Tone Measurements, 10 MHz Tone Spacing
1500 mA
1250 mA
17
3.84 MHz Channel Bandwidth
PAR = 8.5 dB @ 0.01% Probability (CCDF)
VDD = 28 Vdc, Pout = 20 W (Avg.), IDQ = 1000 mA
2-Carrier W-CDMA, 10 MHz Carrier Spacing
VDD = 28 Vdc, Pout = 40 W (Avg.), IDQ = 1000 mA
2-Carrier W-CDMA, 10 MHz Carrier Spacing
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相關代理商/技術參數(shù) |
參數(shù)描述 |
|---|---|
| MRF6S23100HR3_06 | 制造商:FREESCALE 制造商全稱:Freescale Semiconductor, Inc 功能描述:RF Power Field Effect Transistors |
| MRF6S23100HR5 | 功能描述:射頻MOSFET電源晶體管 HV6 2.3GHZ 20W RoHS:否 制造商:Freescale Semiconductor 配置:Single 晶體管極性: 頻率:1800 MHz to 2000 MHz 增益:27 dB 輸出功率:100 W 汲極/源極擊穿電壓: 漏極連續(xù)電流: 閘/源擊穿電壓: 最大工作溫度: 封裝 / 箱體:NI-780-4 封裝:Tray |
| MRF6S23100HSR3 | 功能描述:射頻MOSFET電源晶體管 HV6 2.3GHZ 20W RoHS:否 制造商:Freescale Semiconductor 配置:Single 晶體管極性: 頻率:1800 MHz to 2000 MHz 增益:27 dB 輸出功率:100 W 汲極/源極擊穿電壓: 漏極連續(xù)電流: 閘/源擊穿電壓: 最大工作溫度: 封裝 / 箱體:NI-780-4 封裝:Tray |
| MRF6S23100HSR5 | 功能描述:射頻MOSFET電源晶體管 HV6 2.3GHZ 20W RoHS:否 制造商:Freescale Semiconductor 配置:Single 晶體管極性: 頻率:1800 MHz to 2000 MHz 增益:27 dB 輸出功率:100 W 汲極/源極擊穿電壓: 漏極連續(xù)電流: 閘/源擊穿電壓: 最大工作溫度: 封裝 / 箱體:NI-780-4 封裝:Tray |
| MRF6S23100HXX | 制造商:FREESCALE 制造商全稱:Freescale Semiconductor, Inc 功能描述:RF Power Dield Effect Transistors |
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