參數(shù)資料
型號： MRF6S21060NBR1
廠商： FREESCALE SEMICONDUCTOR INC
元件分類： 功率晶體管
英文描述： S BAND, Si, N-CHANNEL, RF POWER, MOSFET, TO-272
封裝： ROHS COMPLIANT, PLASTIC, CASE 1484-04, WB-4
文件頁數(shù)： 18/20頁
文件大?。?/td> 870K
代理商： MRF6S21060NBR1
MRF6S21060NR1 MRF6S21060NBR1
7
RF Device Data
Freescale Semiconductor
TYPICAL CHARACTERISTICS
W-CDMA TEST SIGNAL
Figure 12. MTTF Factor versus Junction Temperature
10
0.0001
100
0
PEAK-T O-A VERAGE (dB)
Figure 13. CCDF W-CDMA 3GPP, Test Model 1,
64 DPCH, 67% Clipping, Single-Carrier Test Signal
10
1
0.1
0.01
0.001
24
68
Figure 14. 2‐Carrier W‐CDMA Spectrum
f, FREQUENCY (MHz)
3.84 MHz
Channel BW
-IM3 in
3.84 MHz BW
+IM3 in
3.84 MHz BW
PROBABILITY
(%)
(dB)
+20
+30
0
-10
-40
-50
-60
-70
-80
-20
20
515
10
0
-5
-10
-15
-2 0
-25
25
-30
-ACPR in
3.84 MHz BW
+ACPR in
3.84 MHz BW
W-CDMA. ACPR Measured in 3.84 MHz Channel
Bandwidth @
±5 MHz Offset. IM3 Measured in
3.84 MHz Bandwidth @
±10 MHz Offset. PAR =
8.5 dB @ 0.01% Probability on CCDF
250
109
90
TJ, JUNCTION TEMPERATURE (°C)
This above graph displays calculated MTTF in hours when the device
is operated at VDD = 28 Vdc, Pout = 14 W Avg., and ηD = 26%.
MTTF calculator available at http://www.freescale.com/rf. Select
Software & Tools/Development Tools/Calculators to access MTTF
calculators by product.
107
106
105
110
130
150
170
190
MTTF
(HOURS)
210
230
108
相關(guān)PDF資料
PDF描述
MRF6S21100HR3 S BAND, Si, N-CHANNEL, RF POWER, MOSFET
MRF6S21100HSR3 S BAND, Si, N-CHANNEL, RF POWER, MOSFET
MRF6S21100NBR1 S BAND, Si, N-CHANNEL, RF POWER, MOSFET, TO-272
MRF6S21140HSR3 S BAND, Si, N-CHANNEL, RF POWER, MOSFET
MRF6S21190HR3 S BAND, Si, N-CHANNEL, RF POWER, MOSFET
相關(guān)代理商/技術(shù)參數(shù)
參數(shù)描述
MRF6S21060NR1 功能描述:射頻MOSFET電源晶體管 2170MHZ 14W RoHS:否 制造商:Freescale Semiconductor 配置:Single 晶體管極性: 頻率:1800 MHz to 2000 MHz 增益:27 dB 輸出功率:100 W 汲極/源極擊穿電壓: 漏極連續(xù)電流: 閘/源擊穿電壓: 最大工作溫度: 封裝 / 箱體:NI-780-4 封裝:Tray
MRF6S21060NR1_08 制造商:FREESCALE 制造商全稱:Freescale Semiconductor, Inc 功能描述:RF Power Field Effect Transistors N-Channel Enhancement-Mode Lateral MOSFETs
MRF6S21100HR3 功能描述:射頻MOSFET電源晶體管 HV6 23W W-CDMA RoHS:否 制造商:Freescale Semiconductor 配置:Single 晶體管極性: 頻率:1800 MHz to 2000 MHz 增益:27 dB 輸出功率:100 W 汲極/源極擊穿電壓: 漏極連續(xù)電流: 閘/源擊穿電壓: 最大工作溫度: 封裝 / 箱體:NI-780-4 封裝:Tray
MRF6S21100HR5 功能描述:射頻MOSFET電源晶體管 HV6 23W W-CDMA RoHS:否 制造商:Freescale Semiconductor 配置:Single 晶體管極性: 頻率:1800 MHz to 2000 MHz 增益:27 dB 輸出功率:100 W 汲極/源極擊穿電壓: 漏極連續(xù)電流: 閘/源擊穿電壓: 最大工作溫度: 封裝 / 箱體:NI-780-4 封裝:Tray
MRF6S21100HS 制造商:FREESCALE-SEMI 功能描述:
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