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參數(shù)資料
| 型號： | MRF6S21060NBR1 |
| 廠商： | FREESCALE SEMICONDUCTOR INC |
| 元件分類： | 功率晶體管 |
| 英文描述： | S BAND, Si, N-CHANNEL, RF POWER, MOSFET, TO-272 |
| 封裝： | ROHS COMPLIANT, PLASTIC, CASE 1484-04, WB-4 |
| 文件頁數(shù)： | 17/20頁 |
| 文件大?。?/td> | 870K |
| 代理商： | MRF6S21060NBR1 |
6
RF Device Data
Freescale Semiconductor
MRF6S21060NR1 MRF6S21060NBR1
TYPICAL CHARACTERISTICS
200
10
17
1
0
70
Pout, OUTPUT POWER (WATTS) CW
10
16
14
12
60
50
40
30
η
D
,DRAIN
EFFICIENCY
(%)
G
ps
,POWER
GAIN
(dB)
15
13
11
VDD = 28 Vdc
IDQ = 610 mA
f = 2140 MHz
ηD
Gps
IM3
(dBc),
ACPR
(dBc)
Figure 7. Intermodulation Distortion Products
versus Tone Spacing
10
-60
-1 0
0.1
7th Order
TWO-T ONE SPACING (MHz)
VDD = 28 Vdc, Pout = 60 W (PEP), IDQ = 610 mA
Two-Tone Measurements
(f1 + f2)/2 = Center Frequency of 2140 MHz
5th Order
3rd Order
-2 0
-3 0
-4 0
-5 0
1
100
Figure 8. Pulsed CW Output Power versus
Input Power
Figure 9. 2-Carrier W-CDMA ACPR, IM3, Power Gain
and Drain Efficiency versus Output Power
0
-60
Pout, OUTPUT POWER (WATTS) AVG.
60
0
-20
40
30
-30
10
200
-40
40
57
P3dB = 49.986 dBm (99.68 W)
Pin, INPUT POWER (dBm)
VDD = 28 Vdc, IDQ = 610 mA
Pulsed CW, 8
μsec(on), 1 msec(off)
f = 2140 MHz
53
49
45
43
32
30
36
34
Actual
Ideal
55
51
47
28
Figure 10. Power Gain and Drain Efficiency
versus CW Output Power
Figure 11. Power Gain versus Output Power
Pout, OUTPUT POWER (WATTS) CW
IM3
Gps
η
D
,DRAIN
EFFICIENCY
(%),
G
ps
,POWER
GAIN
(dB)
IMD,
INTERMODULA
TION
DIST
OR
TION
(dBc)
P
out
,OUTPUT
POWER
(dBm)
G
ps
,POWER
GAIN
(dB)
VDD = 24 V
120
10
16
0
12
11
20
13
14
IDQ = 610 mA
f = 2140 MHz
50
-50
ηD
ACPR
28 V
32 V
38
1
-10
40
60
80
10
20
P1dB = 49.252 dBm (84.18 W)
20
-30
_C
TC = -30_C
85
_C
25
_C
TC = -30_C
85
_C
25
_C
85
_C
-30
_C
100
-30
_C
25
_C
85
_C
100
25
_C
15
100
VDD = 28 Vdc, IDQ = 610 mA
f1 = 2135 MHz, f2 = 2145 MHz
2-Carrier W-CDMA, 10 MHz Carrier
Spacing, 3.84 MHz Channel
Bandwidth, PAR = 8.5 dB @ 0.01%
Probability (CCDF)
25
_C
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相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| MRF6S21060NR1 | 功能描述:射頻MOSFET電源晶體管 2170MHZ 14W RoHS:否 制造商:Freescale Semiconductor 配置:Single 晶體管極性: 頻率:1800 MHz to 2000 MHz 增益:27 dB 輸出功率:100 W 汲極/源極擊穿電壓: 漏極連續(xù)電流: 閘/源擊穿電壓: 最大工作溫度: 封裝 / 箱體:NI-780-4 封裝:Tray |
| MRF6S21060NR1_08 | 制造商:FREESCALE 制造商全稱:Freescale Semiconductor, Inc 功能描述:RF Power Field Effect Transistors N-Channel Enhancement-Mode Lateral MOSFETs |
| MRF6S21100HR3 | 功能描述:射頻MOSFET電源晶體管 HV6 23W W-CDMA RoHS:否 制造商:Freescale Semiconductor 配置:Single 晶體管極性: 頻率:1800 MHz to 2000 MHz 增益:27 dB 輸出功率:100 W 汲極/源極擊穿電壓: 漏極連續(xù)電流: 閘/源擊穿電壓: 最大工作溫度: 封裝 / 箱體:NI-780-4 封裝:Tray |
| MRF6S21100HR5 | 功能描述:射頻MOSFET電源晶體管 HV6 23W W-CDMA RoHS:否 制造商:Freescale Semiconductor 配置:Single 晶體管極性: 頻率:1800 MHz to 2000 MHz 增益:27 dB 輸出功率:100 W 汲極/源極擊穿電壓: 漏極連續(xù)電流: 閘/源擊穿電壓: 最大工作溫度: 封裝 / 箱體:NI-780-4 封裝:Tray |
| MRF6S21100HS | 制造商:FREESCALE-SEMI 功能描述: |
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