參數(shù)資料
型號： MRF6S20010GNR1
廠商： FREESCALE SEMICONDUCTOR INC
元件分類： 功率晶體管
英文描述： S BAND, Si, N-CHANNEL, RF POWER, MOSFET, TO-270BA
封裝： ROHS COMPLIANT, PLASTIC, CASE 1265A-03, GULL, 2 PIN
文件頁數(shù)： 9/27頁
文件大?。?/td> 687K
代理商： MRF6S20010GNR1
MRF6S20010NR1 MRF6S20010GNR1
17
RF Device Data
Freescale Semiconductor
Figure 29. Series Equivalent Source and Load Impedance
Zsource = Test circuit impedance as measured from
gate to ground.
Zload
= Test circuit impedance as measured
from drain to ground.
Z source
Z load
Input
Matching
Network
Device
Under
Test
Output
Matching
Network
f = 1880 MHz
Zo = 25 Ω
Zload
Zsource
f
MHz
Zsource
Ω
Zload
Ω
1805
1840
1880
13.237 + j5.810
14.858 + j6.279
13.953 + j6.084
2.445 + j3.698
2.542 + j3.942
2.695 + j4.170
VDD = 28 Vdc, IDQ = 130 mA, Pout = 4 W Avg.
1800 MHz
f
MHz
Zsource
Ω
Zload
Ω
2110
2140
2170
3.619 + j0.792
4.087 + j0.558
3.918 + j0.797
2.544 + j3.068
2.673 + j3.291
2.818 + j3.406
VDD = 28 Vdc, IDQ = 130 mA, Pout = 10 W PEP
2170 MHz
f
MHz
Zsource
Ω
Zload
Ω
1930
1960
1990
9.237 + j1.849
9.889 + j2.434
9.521 + j2.144
2.770 + j3.497
2.754 + j3.668
2.772 + j3.833
VDD = 28 Vdc, IDQ = 130 mA, Pout = 1 W Avg.
1900 MHz
f = 1805 MHz
f = 1880 MHz
f = 1930 MHz
f = 1990 MHz
Zload
Zsource
Zo = 25 Ω
f = 1990 MHz
f = 1930 MHz
f = 2110 MHz
Zsource
Zload
f = 2170 MHz
f = 2110 MHz
Zo = 25 Ω
相關PDF資料
PDF描述
MRF6S20010NR1 S BAND, Si, N-CHANNEL, RF POWER, MOSFET, TO-270AA
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相關代理商/技術參數(shù)
參數(shù)描述
MRF6S20010GNR1-CUT TAPE 制造商:Freescale 功能描述:MRF6S20010 Series 1.6 to 2.2 GHz 28 V 10 W RF Power N-Ch Mosfet - TO-270
MRF6S20010NR1 功能描述:射頻MOSFET電源晶體管 HV6 2GHZ 10W TO270-2 RoHS:否 制造商:Freescale Semiconductor 配置:Single 晶體管極性: 頻率:1800 MHz to 2000 MHz 增益:27 dB 輸出功率:100 W 汲極/源極擊穿電壓: 漏極連續(xù)電流: 閘/源擊穿電壓: 最大工作溫度: 封裝 / 箱體:NI-780-4 封裝:Tray
MRF6S20010NR1_09 制造商:FREESCALE 制造商全稱:Freescale Semiconductor, Inc 功能描述:RF Power Field Effect Transistors N-Channel Enhancement-Mode Lateral MOSFETs
MRF6S21050LR3 功能描述:射頻MOSFET電源晶體管 HV6 W-CDMA 11.5W NI400L RoHS:否 制造商:Freescale Semiconductor 配置:Single 晶體管極性: 頻率:1800 MHz to 2000 MHz 增益:27 dB 輸出功率:100 W 汲極/源極擊穿電壓: 漏極連續(xù)電流: 閘/源擊穿電壓: 最大工作溫度: 封裝 / 箱體:NI-780-4 封裝:Tray
MRF6S21050LR3_08 制造商:FREESCALE 制造商全稱:Freescale Semiconductor, Inc 功能描述:RF Power Field Effect Transistors N-Channel Enhancement-Mode Lateral MOSFETs
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