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參數(shù)資料
| 型號(hào)： | MRF6S20010GNR1 |
| 廠商： | FREESCALE SEMICONDUCTOR INC |
| 元件分類： | 功率晶體管 |
| 英文描述： | S BAND, Si, N-CHANNEL, RF POWER, MOSFET, TO-270BA |
| 封裝： | ROHS COMPLIANT, PLASTIC, CASE 1265A-03, GULL, 2 PIN |
| 文件頁數(shù)： | 19/27頁 |
| 文件大小： | 687K |
| 代理商： | MRF6S20010GNR1 |
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26
RF Device Data
Freescale Semiconductor
MRF6S20010NR1 MRF6S20010GNR1
PRODUCT DOCUMENTATION, TOOLS AND SOFTWARE
Refer to the following documents to aid your design process.
Application Notes
AN1907: Solder Reflow Attach Method for High Power RF Devices in Plastic Packages
AN1955: Thermal Measurement Methodology of RF Power Amplifiers
AN3789: Clamping of High Power RF Transistors and RFICs in Over-Molded Plastic Packages
Engineering Bulletins
EB212: Using Data Sheet Impedances for RF LDMOS Devices
Software
Electromigration MTTF Calculator
RF High Power Model
For Software and Tools, do a Part Number search at http://www.freescale.com, and select the “Part Number” link. Go to the
Software & Tools tab on the part’s Product Summary page to download the respective tool.
REVISION HISTORY
The following table summarizes revisions to this document.
Revision
Date
Description
2
Dec. 2008
Changed Storage Temperature Range in Max Ratings table from -65 to +175 to -65 to +150 for
standardization across products, p. 1
Added Case Operating Temperature limit to the Maximum Ratings table and set limit to 150°C, p. 1
Operating Junction Temperature increased from 200°C to 225°C in Maximum Ratings table, related
“Continuous use at maximum temperature will affect MTTF” footnote added and changed 200°C to 225°C
in Capable Plastic Package bullet, p. 1
Corrected VDS to VDD in the RF test condition voltage callout for VGS(Q), On Characteristics table, p. 2
Corrected Ciss test condition to indicate AC stimulus on the VGS connection versus the VDS connection,
Dynamic Characteristics table, p. 2
Updated Part Numbers in Tables 6, 7, 8, Component Designations and Values, to RoHS compliant part
numbers, p. 4, 10, 14
Adjusted scale for Fig. 7, Intermodulation Distortion Products versus Tone Spacing, to better match the
device’s capabilities, p. 6
Removed lower voltage tests from Fig. 10, Power Gain versus Output Power, due to fixed tuned fixture
limitations, p. 7
Replaced Fig. 12, MTTF versus Junction Temperature with updated graph. Removed Amps2 and listed
operating characteristics and location of MTTF calculator for device, p. 7
Removed ALT1 definition from Fig. 21, Single-Carrier CCDF N-CDMA, given no supporting performance
information provided, p. 13
Replaced Case Outline 1265-08 with 1265-09, Issue K, p. 1, 20-22. Corrected cross hatch pattern in
bottom view and changed its dimensions (D2 and E3) to minimum value on source contact (D2 changed
from Min-Max .290-.320 to .290 Min; E3 changed from Min-Max .150-.180 to .150 Min). Added JEDEC
Standard Package Number.
Replaced Case Outline 1265A-02 with 1265A-03, Issue C, p. 1, 23-25. Corrected cross hatch pattern and
its dimensions (D2 and E2) on source contact (D2 changed from Min-Max .290-.320 to .290 Min; E3
changed from Min-Max .150-.180 to .150 Min). Added pin numbers. Corrected mm dimension L for
gull-wing foot from 4.90-5.06 Min-Max to 0.46-0.61 Min-Max. Added JEDEC Standard Package Number.
Added Product Documentation and Revision History, p. 26
3
June 2009
Corrected decimal placement for Ciss (changed 0.12 pF to 120 pF) and Coss (changed 0.02 pF to 20 pF),
Dynamic Characteristics table, p. 2
Added footnote, Measurement made with device in straight lead configuration before any lead forming
operation is applied, to Functional Tests table, p. 2.
Added AN3789, Clamping of High Power RF Transistors and RFICs in Over-Molded Plastic Packages to
Product Documentation, Application Notes, p. 26
Added Electromigration MTTF Calculator and RF High Power Model availability to Product Software, p. 26
相關(guān)PDF資料 |
PDF描述 |
|---|---|
| MRF6S20010NR1 | S BAND, Si, N-CHANNEL, RF POWER, MOSFET, TO-270AA |
| MRF6S21050LSR3 | S BAND, Si, N-CHANNEL, RF POWER, MOSFET |
| MRF6S21050LR3 | S BAND, Si, N-CHANNEL, RF POWER, MOSFET |
| MRF6S21060NR1 | S BAND, Si, N-CHANNEL, RF POWER, MOSFET, TO-270 |
| MRF6S21060NBR1 | S BAND, Si, N-CHANNEL, RF POWER, MOSFET, TO-272 |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| MRF6S20010GNR1-CUT TAPE | 制造商:Freescale 功能描述:MRF6S20010 Series 1.6 to 2.2 GHz 28 V 10 W RF Power N-Ch Mosfet - TO-270 |
| MRF6S20010NR1 | 功能描述:射頻MOSFET電源晶體管 HV6 2GHZ 10W TO270-2 RoHS:否 制造商:Freescale Semiconductor 配置:Single 晶體管極性: 頻率:1800 MHz to 2000 MHz 增益:27 dB 輸出功率:100 W 汲極/源極擊穿電壓: 漏極連續(xù)電流: 閘/源擊穿電壓: 最大工作溫度: 封裝 / 箱體:NI-780-4 封裝:Tray |
| MRF6S20010NR1_09 | 制造商:FREESCALE 制造商全稱:Freescale Semiconductor, Inc 功能描述:RF Power Field Effect Transistors N-Channel Enhancement-Mode Lateral MOSFETs |
| MRF6S21050LR3 | 功能描述:射頻MOSFET電源晶體管 HV6 W-CDMA 11.5W NI400L RoHS:否 制造商:Freescale Semiconductor 配置:Single 晶體管極性: 頻率:1800 MHz to 2000 MHz 增益:27 dB 輸出功率:100 W 汲極/源極擊穿電壓: 漏極連續(xù)電流: 閘/源擊穿電壓: 最大工作溫度: 封裝 / 箱體:NI-780-4 封裝:Tray |
| MRF6S21050LR3_08 | 制造商:FREESCALE 制造商全稱:Freescale Semiconductor, Inc 功能描述:RF Power Field Effect Transistors N-Channel Enhancement-Mode Lateral MOSFETs |
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