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參數(shù)資料
| 型號(hào)： | MRF6S20010GNR1 |
| 廠商： | FREESCALE SEMICONDUCTOR INC |
| 元件分類： | 功率晶體管 |
| 英文描述： | S BAND, Si, N-CHANNEL, RF POWER, MOSFET, TO-270BA |
| 封裝： | ROHS COMPLIANT, PLASTIC, CASE 1265A-03, GULL, 2 PIN |
| 文件頁數(shù)： | 25/27頁 |
| 文件大?。?/td> | 687K |
| 代理商： | MRF6S20010GNR1 |
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MRF6S20010NR1 MRF6S20010GNR1
7
RF Device Data
Freescale Semiconductor
TYPICAL CHARACTERISTICS — 2110-2170 MHz
30
47
P3dB = 41.5 dBm (14.2 W)
Pin, INPUT POWER (dBm)
VDD = 28 Vdc, IDQ = 130 mA
Pulsed CW, 8
μsec(on), 1 msec(off)
f = 2170 MHz
45
43
41
39
35
22
24
26
Actual
Ideal
28
20
Figure 8. Pulsed CW Output Power versus
Input Power
P
out
,OUTPUT
POWER
(dBm)
P1dB = 40.9 dBm (12.26 W)
30
11
18
0.1
0
70
TC = 30_C
25
_C
30
_C
10
1
16
15
14
12
50
40
20
10
Pout, OUTPUT POWER (WATTS) CW
Figure 9. Power Gain and Drain Efficiency
versus CW Output Power
G
ps
,POWER
GAIN
(dB)
Gps
85
_C
25
_C
85
_C
VDD = 28 Vdc
IDQ = 130 mA
f = 2170 MHz
ηD
η
D,
DRAIN
EFFICIENCY
(%)
Pout, OUTPUT POWER (WATTS) CW
Figure 10. Power Gain versus Output Power
IDQ = 130 mA
f = 2170 MHz
10
16
018
13
11
14
69
12
G
ps
,POWER
GAIN
(dB)
21
15
3
VDD = 24 V
28 V
32 V
36
27
400
15
6
S21
f, FREQUENCY (MHz)
Figure 11. Broadband Frequency Response
S11
18
3
90
0
3
18
6
27
12
3200
2800
2400
2000
1600
1200
800
VDD = 28 Vdc
Pout = 10 W (PEP)
IDQ = 130 mA
S1
1(dB)
S21
(dB)
37
17
13
60
30
15
12
9
210
108
90
TJ, JUNCTION TEMPERATURE (°C)
Figure 12. MTTF Factor versus Junction Temperature
107
106
105
190
MTTF
F
ACT
OR
(HOURS
x
AMPS
2 )
170
150
130
110
230
250
This above graph displays calculated MTTF in hours when the device
is operated at VDD = 28 Vdc, Pout = 10 W PEP, and ηD = 36%.
MTTF calculator available at http://www.freescale.com/rf. Select
Software & Tools/Development Tools/Calculators to access MTTF
calculators by product.
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| MRF6S20010NR1 | S BAND, Si, N-CHANNEL, RF POWER, MOSFET, TO-270AA |
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| MRF6S21050LR3 | S BAND, Si, N-CHANNEL, RF POWER, MOSFET |
| MRF6S21060NR1 | S BAND, Si, N-CHANNEL, RF POWER, MOSFET, TO-270 |
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相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| MRF6S20010GNR1-CUT TAPE | 制造商:Freescale 功能描述:MRF6S20010 Series 1.6 to 2.2 GHz 28 V 10 W RF Power N-Ch Mosfet - TO-270 |
| MRF6S20010NR1 | 功能描述:射頻MOSFET電源晶體管 HV6 2GHZ 10W TO270-2 RoHS:否 制造商:Freescale Semiconductor 配置:Single 晶體管極性: 頻率:1800 MHz to 2000 MHz 增益:27 dB 輸出功率:100 W 汲極/源極擊穿電壓: 漏極連續(xù)電流: 閘/源擊穿電壓: 最大工作溫度: 封裝 / 箱體:NI-780-4 封裝:Tray |
| MRF6S20010NR1_09 | 制造商:FREESCALE 制造商全稱:Freescale Semiconductor, Inc 功能描述:RF Power Field Effect Transistors N-Channel Enhancement-Mode Lateral MOSFETs |
| MRF6S21050LR3 | 功能描述:射頻MOSFET電源晶體管 HV6 W-CDMA 11.5W NI400L RoHS:否 制造商:Freescale Semiconductor 配置:Single 晶體管極性: 頻率:1800 MHz to 2000 MHz 增益:27 dB 輸出功率:100 W 汲極/源極擊穿電壓: 漏極連續(xù)電流: 閘/源擊穿電壓: 最大工作溫度: 封裝 / 箱體:NI-780-4 封裝:Tray |
| MRF6S21050LR3_08 | 制造商:FREESCALE 制造商全稱:Freescale Semiconductor, Inc 功能描述:RF Power Field Effect Transistors N-Channel Enhancement-Mode Lateral MOSFETs |
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