參數(shù)資料
型號： MRF6S18140HR3
廠商： FREESCALE SEMICONDUCTOR INC
元件分類： 功率晶體管
英文描述： L BAND, Si, N-CHANNEL, RF POWER, MOSFET
封裝： ROHS COMPLIANT, NI-880, CASE 465B-03, 2 PIN
文件頁數(shù)： 9/12頁
文件大?。?/td> 435K
代理商： MRF6S18140HR3
AR
C
HIVE
INF
O
RMA
TI
O
N
ARCHIVE
INFORMA
TION
6
RF Device Data
Freescale Semiconductor
MRF6S18140HR3 MRF6S18140HSR3
TYPICAL CHARACTERISTICS
Figure 7. Intermodulation Distortion Products
versus Output Power
Pout, OUTPUT POWER (WATTS) PEP
IMD,
INTERMODULA
TION
DIST
OR
TION
(dBc)
-70
-10
1
100
-40
-50
10
-30
-20
-60
7th Order
VDD = 28 Vdc, IDQ = 1200 mA
f1 = 1838.75 MHz, f2 = 1841.25 MHz
Two-Tone Measurements
5th Order
3rd Order
Figure 8. Intermodulation Distortion Products
versus Tone Spacing
10
0
TWO-T ONE SPACING (MHz)
VDD = 28 Vdc, Pout = 140 W (PEP), IDQ = 1200 mA
Two-Tone Measurements,
(f1 + f2)/2 = Center Frequency of 1840 MHz
IM7-U
-3 0
-4 0
-5 0
1
100
IMD,
INTERMODULA
TION
DIST
OR
TION
(dBc)
Figure 9. Pulsed CW Output Power versus
Input Power
44
60
33
Pin, INPUT POWER (dBm)
VDD = 28 Vdc, IDQ = 1200 mA
Pulsed CW, 12
μsec(on), 1% Duty Cycle
f = 1840 MHz
58
56
54
52
49
34
36
35
38
37
41
39
Actual
Ideal
P1dB = 52.6 dBm (182.64 W)
59
57
53
55
40
42
32
P
out
,OUTPUT
POWER
(dBm)
P6dB = 53.90 dBm (245.47 W)
Figure 10. 2-Carrier N-CDMA ACPR, IM3, Power Gain
and Drain Efficiency versus Output Power
0
-70
Pout, OUTPUT POWER (WATTS) CW
50
-20
25
-30
20
-35
15
-50
5
-65
1
10
100
-55
10
-30
_C
25
_C
85
_C
IM3
ηD
Gps
TC = -30_C
ACPR
η
D
,DRAIN
EFFICIENCY
(%),
G
ps
,POWER
GAIN
(dB)
IM3
(dBc),
ACPR
(dBc)
50
P3dB = 53.36 dBm (216.77 W)
400
IM7-L
IM5-L
IM5-U
IM3-L
IM3-U
-2 0
-1 0
43
51
30
35
40
45
-60
-45
-40
-25
25
_C
85
_C
VDD = 28 Vdc, IDQ = 1200 mA
f1 = 1838.75 MHz, f2 = 1841.25 MHz
2-Carrier N-CDMA, 2.5 MHz Carrier
Spacing, 1.2288 MHz Channel
Bandwidth, PAR = 9.8 dB
@ 0.01% Probability (CCDF)
-6 0
相關(guān)PDF資料
PDF描述
MRF6S18140HSR3 L BAND, Si, N-CHANNEL, RF POWER, MOSFET
MRF6S19060NR1 L BAND, Si, N-CHANNEL, RF POWER, MOSFET, TO-270
MRF6S19060NBR1 L BAND, Si, N-CHANNEL, RF POWER, MOSFET, TO-272
MRF6S19100HR3 L BAND, Si, N-CHANNEL, RF POWER, MOSFET
MRF6S19100HSR3 L BAND, Si, N-CHANNEL, RF POWER, MOSFET
相關(guān)代理商/技術(shù)參數(shù)
參數(shù)描述
MRF6S18140HR3_09 制造商:FREESCALE 制造商全稱:Freescale Semiconductor, Inc 功能描述:RF Power Field Effect Transistors N-Channel Enhancement-Mode Lateral MOSFETs
MRF6S18140HR5 功能描述:射頻MOSFET電源晶體管 1.8GHZ 28V 29W RoHS:否 制造商:Freescale Semiconductor 配置:Single 晶體管極性: 頻率:1800 MHz to 2000 MHz 增益:27 dB 輸出功率:100 W 汲極/源極擊穿電壓: 漏極連續(xù)電流: 閘/源擊穿電壓: 最大工作溫度: 封裝 / 箱體:NI-780-4 封裝:Tray
MRF6S18140HSR3 功能描述:射頻MOSFET電源晶體管 1.8GHZ 28V 29W RoHS:否 制造商:Freescale Semiconductor 配置:Single 晶體管極性: 頻率:1800 MHz to 2000 MHz 增益:27 dB 輸出功率:100 W 汲極/源極擊穿電壓: 漏極連續(xù)電流: 閘/源擊穿電壓: 最大工作溫度: 封裝 / 箱體:NI-780-4 封裝:Tray
MRF6S18140HSR5 功能描述:射頻MOSFET電源晶體管 1.8GHZ 28V 29W RoHS:否 制造商:Freescale Semiconductor 配置:Single 晶體管極性: 頻率:1800 MHz to 2000 MHz 增益:27 dB 輸出功率:100 W 汲極/源極擊穿電壓: 漏極連續(xù)電流: 閘/源擊穿電壓: 最大工作溫度: 封裝 / 箱體:NI-780-4 封裝:Tray
MRF6S1900HSR3 制造商:Freescale Semiconductor 功能描述:
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