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參數(shù)資料
| 型號： | MRF6S18140HR3 |
| 廠商： | FREESCALE SEMICONDUCTOR INC |
| 元件分類： | 功率晶體管 |
| 英文描述： | L BAND, Si, N-CHANNEL, RF POWER, MOSFET |
| 封裝： | ROHS COMPLIANT, NI-880, CASE 465B-03, 2 PIN |
| 文件頁數(shù)： | 10/12頁 |
| 文件大?。?/td> | 435K |
| 代理商： | MRF6S18140HR3 |
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INFORMA
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MRF6S18140HR3 MRF6S18140HSR3
7
RF Device Data
Freescale Semiconductor
TYPICAL CHARACTERISTICS
100
12
1
0
66
Pout, OUTPUT POWER (WATTS) CW
Figure 11. Power Gain and Drain Efficiency
versus CW Output Power
VDD = 28 Vdc
IDQ = 1200 mA
f = 1840 MHz
TC = -30_C
25
_C
10
18
17
16
15
14
55
44
33
22
11
η
D,
DRAIN
EFFICIENCY
(%)
Gps
ηD
G
ps
,POWER
GAIN
(dB)
13
400
85
_C
-30
_C
25
_C
85
_C
Figure 12. Power Gain versus Output Power
Pout, OUTPUT POWER (WATTS) CW
G
ps
,POWER
GAIN
(dB)
13
17
0
260
15
14
100
200
16
VDD = 24 V
28 V
32 V
IDQ = 1200 mA
f = 1840 MHz
Figure 13. MTTF Factor versus Junction Temperature
250
108
90
TJ, JUNCTION TEMPERATURE (°C)
This above graph displays calculated MTTF in hours when the device
is operated at VDD = 28 Vdc, Pout = 29 W Avg., and ηD = 27.5%.
MTTF calculator available at http://www.freescale.com/rf. Select
Software & Tools/Development Tools/Calculators to access MTTF
calculators by product.
107
106
105
110
130
150
170
190
MTTF
(HOURS)
210
230
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| MRF6S19100HR3 | L BAND, Si, N-CHANNEL, RF POWER, MOSFET |
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相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| MRF6S18140HR3_09 | 制造商:FREESCALE 制造商全稱:Freescale Semiconductor, Inc 功能描述:RF Power Field Effect Transistors N-Channel Enhancement-Mode Lateral MOSFETs |
| MRF6S18140HR5 | 功能描述:射頻MOSFET電源晶體管 1.8GHZ 28V 29W RoHS:否 制造商:Freescale Semiconductor 配置:Single 晶體管極性: 頻率:1800 MHz to 2000 MHz 增益:27 dB 輸出功率:100 W 汲極/源極擊穿電壓: 漏極連續(xù)電流: 閘/源擊穿電壓: 最大工作溫度: 封裝 / 箱體:NI-780-4 封裝:Tray |
| MRF6S18140HSR3 | 功能描述:射頻MOSFET電源晶體管 1.8GHZ 28V 29W RoHS:否 制造商:Freescale Semiconductor 配置:Single 晶體管極性: 頻率:1800 MHz to 2000 MHz 增益:27 dB 輸出功率:100 W 汲極/源極擊穿電壓: 漏極連續(xù)電流: 閘/源擊穿電壓: 最大工作溫度: 封裝 / 箱體:NI-780-4 封裝:Tray |
| MRF6S18140HSR5 | 功能描述:射頻MOSFET電源晶體管 1.8GHZ 28V 29W RoHS:否 制造商:Freescale Semiconductor 配置:Single 晶體管極性: 頻率:1800 MHz to 2000 MHz 增益:27 dB 輸出功率:100 W 汲極/源極擊穿電壓: 漏極連續(xù)電流: 閘/源擊穿電壓: 最大工作溫度: 封裝 / 箱體:NI-780-4 封裝:Tray |
| MRF6S1900HSR3 | 制造商:Freescale Semiconductor 功能描述: |
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