參數資料
型號： MRF6P3300HR3
廠商： FREESCALE SEMICONDUCTOR INC
元件分類： 功率晶體管
英文描述： UHF BAND, Si, N-CHANNEL, RF POWER, MOSFET
封裝： ROHS COMPLIANT, NI-860C3, CASE 375G-04, 4 PIN
文件頁數： 7/24頁
文件大?。?/td> 993K
代理商： MRF6P3300HR3
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MRF6P3300HR3 MRF6P3300HR5
15
RF Device Data
Freescale Semiconductor
TYPICAL TWO-TONE BROADBAND CHARACTERISTICS
Figure 32. Intermodulation Distortion
Products versus Tone Spacing @ 470 MHz
10
-60
0
0.1
7th Order
TWO-T ONE SPACING (MHz)
VDD = 32 Vdc, Pout = 270 W (PEP), IDQ = 1600 mA
Two-Tone Measurements
f1 = 470 MHz, f2 = 470 MHz + Tone Spacing
5th Order
3rd Order
-10
-20
-40
-50
1
100
IMD,
INTERMODULA
TION
DIST
OR
TION
(dBc)
-30
Figure 33. Intermodulation Distortion
Products versus Tone Spacing @ 560 MHz
10
-60
0
0.01
7th Order
TWO-T ONE SPACING (MHz)
VDD = 32 Vdc, Pout = 270 W (PEP), IDQ = 1600 mA
Two-Tone Measurements, f = 560 MHz
5th Order
3rd Order
-10
-20
-40
-50
1
100
IMD,
INTERMODULA
TION
DIST
OR
TION
(dBc)
-30
0.1
Figure 34. Intermodulation Distortion
Products versus Tone Spacing @ 660 MHz
10
-60
0
0.01
7th Order
TWO-T ONE SPACING (MHz)
VDD = 32 Vdc, Pout = 270 W (PEP), IDQ = 1600 mA
Two-Tone Measurements, f = 660 MHz
5th Order
3rd Order
-10
-20
-40
-50
1
100
IMD,
INTERMODULA
TION
DIST
OR
TION
(dBc)
-30
0.1
Figure 35. Intermodulation Distortion
Products versus Tone Spacing @ 760 MHz
10
-60
0
0.01
7th Order
TWO-T ONE SPACING (MHz)
VDD = 32 Vdc, Pout = 270 W (PEP), IDQ = 1600 mA
Two-Tone Measurements, f = 760 MHz
5th Order
3rd Order
-10
-20
-40
-50
1
100
IMD,
INTERMODULA
TION
DIST
OR
TION
(dBc)
-30
0.1
Figure 36. Intermodulation Distortion
Products versus Tone Spacing @ 860 MHz
10
-60
0
0.1
7th Order
TWO-T ONE SPACING (MHz)
VDD = 32 Vdc, Pout = 270 W (PEP), IDQ = 1600 mA
Two-Tone Measurements, 6 MHz Tone Spacing
f1 = 860 MHz - Tone Spacing, f2 = 860 MHz
5th Order
3rd Order
-10
-20
-40
-50
1
100
IMD,
INTERMODULA
TION
DIST
OR
TION
(dBc)
-30
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相關代理商/技術參數
參數描述
MRF6P3300HR3_06 制造商:FREESCALE 制造商全稱:Freescale Semiconductor, Inc 功能描述:RF Power Field Effect Transistor
MRF6P3300HR5 功能描述:MOSFET RF N-CH 32V 300W NI-860C3 RoHS:是 類別:分離式半導體產品 >> RF FET 系列:- 產品目錄繪圖:MOSFET SOT-23-3 Pkg 標準包裝:3,000 系列:- 晶體管類型:N 通道 JFET 頻率:- 增益:- 電壓 - 測試:- 額定電流:30mA 噪音數據:- 電流 - 測試:- 功率 - 輸出:- 電壓 - 額定:25V 封裝/外殼:TO-236-3，SC-59，SOT-23-3 供應商設備封裝:SOT-23-3（TO-236） 包裝:帶卷 (TR) 產品目錄頁面:1558 (CN2011-ZH PDF) 其它名稱:MMBFJ309LT1GOSMMBFJ309LT1GOS-NDMMBFJ309LT1GOSTR
MRF6P9220HR3 功能描述:MOSFET RF N-CH 28V 47W NI-860C3 RoHS:是 類別:分離式半導體產品 >> RF FET 系列:- 產品目錄繪圖:MOSFET SOT-23-3 Pkg 標準包裝:3,000 系列:- 晶體管類型:N 通道 JFET 頻率:- 增益:- 電壓 - 測試:- 額定電流:30mA 噪音數據:- 電流 - 測試:- 功率 - 輸出:- 電壓 - 額定:25V 封裝/外殼:TO-236-3，SC-59，SOT-23-3 供應商設備封裝:SOT-23-3（TO-236） 包裝:帶卷 (TR) 產品目錄頁面:1558 (CN2011-ZH PDF) 其它名稱:MMBFJ309LT1GOSMMBFJ309LT1GOS-NDMMBFJ309LT1GOSTR
MRF6P9220HR3_06 制造商:FREESCALE 制造商全稱:Freescale Semiconductor, Inc 功能描述:RF Power Field Effect Transistor N-Channel Enhancement-Mode Lateral MOSFET
MRF6P9220HR3_08 制造商:FREESCALE 制造商全稱:Freescale Semiconductor, Inc 功能描述:RF Power Field Effect Transistor N-Channel Enhancement-Mode Lateral MOSFET
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