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參數(shù)資料
| 型號： | MRF6P23190HR6 |
| 廠商： | 飛思卡爾半導(dǎo)體(中國)有限公司 |
| 英文描述： | RF Power Field Effect Transistor N-Channel Enhancement-Mode Lateral MOSFET |
| 中文描述： | RF功率場效應(yīng)晶體管N溝道增強(qiáng)型MOSFET的側(cè)向 |
| 文件頁數(shù)： | 6/11頁 |
| 文件大?。?/td> | 437K |
| 代理商： | MRF6P23190HR6 |
6
RF Device Data
Freescale Semiconductor
MRF6P23190HR6
TYPICAL CHARACTERISTICS
400
11
17
1
0
60
P
out
, OUTPUT POWER (WATTS) CW
Figure 10. Power Gain and Drain Efficiency
versus CW Output Power
10
16
14
12
50
40
30
η
D
,
G
p
,
15
13
V
DD
= 28 Vdc
I
DQ
= 1900 mA
f = 2350 MHz
η
D
G
ps
I
Figure 7. Intermodulation Distortion Products
versus Tone Spacing
10
60
0
0.1
7th Order
TWOTONE SPACING (MHz)
V
DD
= 28 Vdc, P
out
= 190 W (PEP)
I
DQ
= 1900 mA, TwoTone Measurements
(f1 + f2)/2 = Center Frequency of 2350 MHz
5th Order
3rd Order
20
30
40
50
1
100
Figure 8. Pulsed CW Output Power versus
Input Power
Figure 9. 2-Carrier W-CDMA ACPR, IM3, Power Gain
and Drain Efficiency versus Output Power
0
55
P
out
, OUTPUT POWER (WATTS) AVG.
36
25
35
24
18
40
6
10
200
45
47
63
P3dB = 55.1 dBm (325.54 W)
P
in
, INPUT POWER (dBm)
V
DD
= 28 Vdc, I
DQ
= 1900 mA
Pulsed CW, 8
μ
sec(on), 1 msec(off)
f = 2350 MHz
59
55
51
49
39
37
43
41
Actual
Ideal
61
57
53
35
Figure 11. Power Gain versus Output Power
P
out
, OUTPUT POWER (WATTS) CW
IM3
G
ps
η
D
,
p
,
I
P
o
,
G
p
,
V
DD
= 24 V
300
10
15
0
12
11
50
13
14
I
DQ
= 1900 mA
f = 2350 MHz
30
50
η
D
ACPR
28
V
32
V
45
1
30
100
150
200
10
20
12
30 C
85 C
T
C
= 30 C
85 C
25 C
T
C
= 30 C
85 C
25 C
85 C
30 C
100
30 C
25 C
85 C
100
250
V
DD
= 28 Vdc, I
DQ
= 1900 mA
f1 = 2345 MHz, f2 = 2355 MHz
2Carrier WCDMA, 10 MHz Carrier
Spacing, 3.84 MHz Channel
Bandwidth, PAR = 8.5 dB @ 0.01%
Probability (CCDF)
25 C
10
49
P6dB = 55.73 dBm (374.11 W)
P1dB = 54.5 dBm (283.85 W)
65
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| MRF6P24190HR6 | RF Power Field Effect Transistor N-Channel Enhancement-Mode Lateral MOSFET |
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相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| MRF6P24190HR5 | 功能描述:射頻MOSFET電源晶體管 2.4GHZ HV6 40W RoHS:否 制造商:Freescale Semiconductor 配置:Single 晶體管極性: 頻率:1800 MHz to 2000 MHz 增益:27 dB 輸出功率:100 W 汲極/源極擊穿電壓: 漏極連續(xù)電流: 閘/源擊穿電壓: 最大工作溫度: 封裝 / 箱體:NI-780-4 封裝:Tray |
| MRF6P24190HR6 | 功能描述:射頻MOSFET電源晶體管 2.4GHZ HV6 40W RoHS:否 制造商:Freescale Semiconductor 配置:Single 晶體管極性: 頻率:1800 MHz to 2000 MHz 增益:27 dB 輸出功率:100 W 汲極/源極擊穿電壓: 漏極連續(xù)電流: 閘/源擊穿電壓: 最大工作溫度: 封裝 / 箱體:NI-780-4 封裝:Tray |
| MRF6P24190HR6_08 | 制造商:FREESCALE 制造商全稱:Freescale Semiconductor, Inc 功能描述:RF Power Field Effect Transistor |
| MRF6P27160H | 制造商:FREESCALE 制造商全稱:Freescale Semiconductor, Inc 功能描述:RF Power Field Effect Transistor N-Channel Enhancement-Mode Lateral MOSFET |
| MRF6P27160H_06 | 制造商:FREESCALE 制造商全稱:Freescale Semiconductor, Inc 功能描述:RF Power Field Effect Transistor N-Channel Enhancement-Mode Lateral MOSFET |
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