參數(shù)資料
型號(hào)： MRF6522-60
廠商： MOTOROLA INC
元件分類(lèi)： 功率晶體管
英文描述： RF MOSFETS(RF MOS場(chǎng)效應(yīng)管)
中文描述： UHF BAND, Si, N-CHANNEL, RF POWER, MOSFET
封裝： CASE 360B-04, 3 PIN
文件頁(yè)數(shù)： 2/12頁(yè)
文件大?。?/td> 186K
代理商： MRF6522-60
MRF6522–60
2
MOTOROLA RF DEVICE DATA
ELECTRICAL CHARACTERISTICS
(TC = 25
°
C unless otherwise noted)
Characteristic
Symbol
Min
Typ
Max
Unit
OFF CHARACTERISTICS
Drain–Source Breakdown Voltage
(VGS = 0 Vdc, ID = 1
μ
Adc)
V(BR)DSS
60
—
—
Vdc
Zero Gate Voltage Drain Current
(VDS = 28 Vdc, VGS = 0)
IDSS
—
—
1
μ
Adc
Gate–Source Leakage Current
(VGS = 20 Vdc, VDS = 0 )
IGSS
—
—
1
μ
Adc
ON CHARACTERISTICS
Gate Threshold Voltage
(VDS = 10 Vdc, ID = 200
μ
Adc)
VGS(th)
2
3
4
Vdc
Gate Quiescent Voltage
(VDS = 28 Vdc, ID = 400 mAdc)
VGS(Q)
3
4
5
Vdc
Drain–Source On–Voltage
(VGS = 10 Vdc, ID = 3 Adc)
VDS(on)
—
0.65
0.8
Vdc
Forward Transconductance
(VDS = 10 Vdc, ID = 3 Adc)
gfs
2.2
2.6
—
S
DYNAMIC CHARACTERISTICS
Input Capacitance (Includes Internal Input MOScap)
(VDS = 26 Vdc, VGS = 0, f = 1 MHz)
Ciss
—
83
—
pF
Output Capacitance
(VDS = 26 Vdc, VGS = 0, f = 1 MHz)
Coss
—
44
—
pF
Reverse Transfer Capacitance
(VDS = 26 Vdc, VGS = 0, f = 1 MHz)
Crss
—
4.3
—
pF
FUNCTIONAL TESTS
(In Motorola Test Fixture)
Common–Source Amplifier Power Gain
(VDD = 28 Vdc, Pout = 60 W, IDQ = 400 mA, f = 960 MHz)
Gps
12.5
—
—
dB
Drain Efficiency
(VDD = 28 Vdc, Pout = 60 W, IDQ = 400 mA, f = 960 MHz)
η
53
—
—
%
Output Mismatch Stress
(VDD = 28 Vdc, Pout = 60 W, IDQ = 400 mA, f = 960 MHz,
VSWR = 5:1, All Phase Angles)
Ψ
No Degradation In Output Power
Before and After Test
相關(guān)PDF資料
PDF描述
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