參數(shù)資料
型號: MRF6522-60
廠商: MOTOROLA INC
元件分類: 功率晶體管
英文描述: RF MOSFETS(RF MOS場效應(yīng)管)
中文描述: UHF BAND, Si, N-CHANNEL, RF POWER, MOSFET
封裝: CASE 360B-04, 3 PIN
文件頁數(shù): 1/12頁
文件大小: 186K
代理商: MRF6522-60
1
MRF6522–60
MOTOROLA RF DEVICE DATA
Motorola, Inc. 1999
The RF MOSFET Line
N–Channel Enhancement–Mode Lateral MOSFET
Designed for broadband commercial and industrial applications at frequen-
cies up to 1.0 GHz and specified for the GSM 925 – 960 MHz band. The high
gain and broadband performance of these devices makes them ideal for
large–signal, common source amplifier applications in 28 volt base station
equipment.
Specified Performance @ 960 MHz, 28 Volts
Output Power — 60 Watts
Power Gain — 12.5 dB (Min)
Efficiency — 53% (Min)
100% Tested for Load Mismatch Stress at all Phase
Angles with 5:1 VSWR
MAXIMUM RATINGS
Rating
Symbol
Value
Unit
Drain–Source Voltage
VDSS
VGS
ID
PD
60
Vdc
Gate–Source Voltage
±
20
Vdc
Drain Current — Continuous
7
Adc
Total Device Dissipation @ TC > = 25
°
C
Derate above 25
°
C
118
0.9
Watts
W/
°
C
Storage Temperature Range
Tstg
TJ
–65 to +150
°
C
Operating Junction Temperature
200
°
C
THERMAL CHARACTERISTICS
Characteristic
Symbol
Max
Unit
Thermal Resistance, Junction to Case
R
θ
JC
1.1
°
C/W
NOTE –
CAUTION
– MOS devices are susceptible to damage from electrostatic charge. Reasonable precautions in handling and
packaging MOS devices should be observed.
Order this document
by MRF6522–60/D
SEMICONDUCTOR TECHNICAL DATA
60 W, 960 MHz
LATERAL N–CHANNEL
BROADBAND
RF POWER MOSFET
CASE 360B–03, STYLE 1
G
D
S
REV 1
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