參數(shù)資料
型號: MRF5S9101MBR1
廠商: FREESCALE SEMICONDUCTOR INC
元件分類: 功率晶體管
英文描述: UHF BAND, Si, N-CHANNEL, RF POWER, MOSFET, TO-272
封裝: ROHS COMPLIANT, PLASTIC, CASE 1484-04, WB-4, 4 PIN
文件頁數(shù): 18/20頁
文件大?。?/td> 542K
代理商: MRF5S9101MBR1
AR
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HIVE
INF
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RMA
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ARCHIVE
INFORMA
TION
MRF5S9101MR1 MRF5S9101MBR1
7
RF Device Data
Freescale Semiconductor
TYPICAL CHARACTERISTICS - 900 MHz
1000
1
0
70
Gps
TC = 30_C
Pout, OUTPUT POWER (WATTS) CW
Figure 7. Power Gain and Drain Efficiency
versus CW Output Power
G
ps
,POWER
GAIN
(dB)
VDD = 26 Vdc
IDQ = 700 mA
f = 940 MHz
25
_C
85
_C
TC = 30_C
25
_C
85
_C
100
10
60
50
40
30
20
10
13
20
19
18
17
16
15
14
980
0
3.5
900
Pout = 50 W Avg.
f, FREQUENCY (MHz)
Figure 8. Error Vector Magnitude versus
Frequency
EVM,
ERROR
VECT
OR
MAGNITUDE
(%
rms)
VDD = 28 Vdc
IDQ = 650 mA
40 W Avg.
25 W Avg.
3
2.5
2
1.5
1
0.5
910
920
930
940
950
960
970
ηD
100
0
9
1
0
60
EVM
Pout, OUTPUT POWER (WATTS) AVG.
Figure 9. Error Vector Magnitude and Drain
Efficiency versus Output Power
EVM,
ERROR
VECT
OR
MAGNITUDE
(%
rms)
TC = 85_C
25
_C
30
_C
VDD = 28 Vdc
IDQ = 650 mA
f = 940 MHz
850
640
530
320
210
10
980
83
63
900
SR 400 kHz
f, FREQUENCY (MHz)
Figure 10. Spectral Regrowth at 400 kHz and
600 kHz versus Frequency
SPECTRAL
REGROWTH
@
400
kHz
and
600
kHz
(dBc)
VDD = 28 Vdc
IDQ = 650 mA
f = 940 MHz
68
73
78
910
920
930
940
950
960
970
Pout = 50 W Avg.
SR 600 kHz
25 W Avg.
40 W Avg.
25 W Avg.
40 W Avg.
50 W Avg.
90
80
45
0
TC = 85_C
Pout, OUTPUT POWER (WATTS) AVG.
Figure 11. Spectral Regrowth at 400 kHz
versus Output Power
SPECTRAL
REGROWTH
@
400
kHz
(dBc)
25
_C
30
_C
60
65
70
10
20
30
40
50
60
70
80
50
55
75
VDD = 28 Vdc
IDQ = 650 mA
f = 940 MHz
η
D
,DRAIN
EFFICIENCY
(%)
η
D
,DRAIN
EFFICIENCY
(%)
ηD
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