參數(shù)資料
型號(hào): MRF5S21100LSR3
廠商: MOTOROLA INC
元件分類: 功率晶體管
英文描述: The RF MOSFET Line RF Power Field Effect N-Channel Enhancement-Mode Lateral MOSFETs
中文描述: S BAND, Si, N-CHANNEL, RF POWER, MOSFET
封裝: NI-780S, CASE 465A-06, 2 PIN
文件頁(yè)數(shù): 5/12頁(yè)
文件大?。?/td> 378K
代理商: MRF5S21100LSR3
MRF5S21100HR3 MRF5S21100HSR3
5
RF Device Data
Freescale Semiconductor
TYPICAL CHARACTERISTICS
42
48
56
34
P3dB = 51.88 dBm (154.17 W)
V
DD
= 28 Vdc, I
DQ
= 1050 mA
Pulsed CW, 8
μ
sec(on), 1msec(off)
Center Frequency = 2140 MHz
Actual
Ideal
P1dB = 51.18 dBm (131.22 W)
55
53
52
50
49
36
37
38
41
40
54
51
35
39
5
15
2040
45
40
IRL
G
ps
ACPR
IM3
f, FREQUENCY (MHz)
Figure 3. 2-Carrier W-CDMA Broadband Performance
Gp
V
DD
= 28 Vdc, P
out
= 23 W (Avg.), I
DQ
= 1050 mA
2Carrier WCDMA, 10 MHz Carrier Spacing
3.84 MHz Channel Bandwidth
Peak/Avg. = 8.5 dB @ 0.01% Probability (CCDF)
I
50
10
20
30
40
I
I
0
2060 2080 2100 2120 2140 2160 2180 2200 2220 2240
14
35
13
30
12
25
11
20
10
20
9
25
8
30
7
35
6
40
100
11
16
1
I
DQ
= 1400 mA
650 mA
P
out
, OUTPUT POWER (WATTS) PEP
Figure 4. Two-Tone Power Gain versus
Output Power
Gp
V
DD
= 28 Vdc
f1 = 2135 MHz, f2 = 2145 MHz
TwoTone Measurement, 10 MHz Tone Spacing
1050 mA
850 mA
1250 mA
15
14
13
12
10
100
55
15
1
P
out
, OUTPUT POWER (WATTS) PEP
Figure 5. Third Order Intermodulation Distortion
versus Output Power
I
I
V
DD
= 28 Vdc
f1 = 2135 MHz, f2 = 2145 MHz
TwoTone Measurement, 10 MHz Tone Spacing
I
DQ
= 1400 mA
650 mA
1050 mA
850 mA
1250 mA
20
25
30
35
40
45
50
10
10
60
20
1
7th Order
TWOTONE SPACING (MHz)
Figure 6. Intermodulation Distortion Products
versus Tone Spacing
I
I
V
DD
= 28 Vdc, P
out
= 100 W (PEP), I
DQ
= 1050 mA
TwoTone Measurements, Center Frequency = 2140 MHz
5th Order
3rd Order
0.1
25
30
35
40
45
50
55
P
in
, INPUT POWER (dBm)
Figure 7. Pulse CW Output Power versus
Input Power
Po
η
D
η
D
,
E
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MRF5S21130HS 制造商:Motorola Inc 功能描述:
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