參數(shù)資料
型號: MRF5S19130HSR3
廠商: FREESCALE SEMICONDUCTOR INC
元件分類: 功率晶體管
英文描述: L BAND, Si, N-CHANNEL, RF POWER, MOSFET
封裝: ROHS COMPLIANT, NI-880S, CASE 465C-02, 2 PIN
文件頁數(shù): 7/10頁
文件大?。?/td> 424K
代理商: MRF5S19130HSR3
6
RF Device Data
Freescale Semiconductor
MRF5S19130HSR3
TYPICAL CHARACTERISTICS
ηD
0
35
1
65
30
Gps
ACPR
IM3
Pout, OUTPUT POWER (WATTS) AVG. (NCDMA)
Figure 8. 2-Carrier N-CDMA ACPR, IM3,
Power Gain and Drain Efficiency
versus Output Power
VDD = 28 Vdc, IDQ = 1200 mA
f1 = 1958.75 MHz, f2 = 1961.25 MHz
2 x NCDMA, 2.5 MHz @
1.2288 MHz Channel Bandwidth
PAR = 9.8 dB @ 0.01% Probability (CCDF)
IM3
(dBc),
ACPR
(dBc)
10
30
35
25
40
20
45
15
50
10
55
5
60
220
105
109
100
Figure 9. MTTF Factor versus Junction Temperature
108
107
106
120
140
160
180
200
MTTF
F
ACT
OR
(HOURS
X
AMPS
2 )
TJ, JUNCTION TEMPERATURE (°C)
This above graph displays calculated MTTF in hours x ampere2
drain current. Life tests at elevated temperatures have correlated to
better than
±10% of the theoretical prediction for metal failure. Divide
MTTF factor by ID2 for MTTF in a particular application.
η
D
,DRAIN
EFFICIENCY
(%),
G
ps
,POWER
GAIN
(dB)
N-CDMA TEST SIGNAL
f, FREQUENCY (MHz)
100
0
Figure 10. 2-Carrier N-CDMA Spectrum
10
20
30
40
50
60
70
80
90
ACPR in 30 kHz
Integrated BW
+ACPR in 30 kHz
Integrated BW
IM3 in
1.2288 MHz
Integrated BW
+IM3 in
1.2288 MHz
Integrated BW
1.2288 MHz
Channel BW
6
1.5
4.5
3
0
1.5
3
4.5
6
7.5
(dB)
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