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參數(shù)資料
| 型號： | MRF5S19130HSR3 |
| 廠商： | FREESCALE SEMICONDUCTOR INC |
| 元件分類： | 功率晶體管 |
| 英文描述： | L BAND, Si, N-CHANNEL, RF POWER, MOSFET |
| 封裝： | ROHS COMPLIANT, NI-880S, CASE 465C-02, 2 PIN |
| 文件頁數(shù)： | 6/10頁 |
| 文件大?。?/td> | 424K |
| 代理商： | MRF5S19130HSR3 |
MRF5S19130HSR3
5
RF Device Data
Freescale Semiconductor
TYPICAL CHARACTERISTICS
ηD
2000
5
15
1900
60
40
IRL
Gps
ACPR
IM3
f, FREQUENCY (MHz)
Figure 3. 2-Carrier N-CDMA Broadband Performance
@ Pout = 26 Watts Avg.
G
ps
,POWER
GAIN
(dB)
VDD = 28 Vdc, Pout = 26 W (Avg.), IDQ = 1200 mA
2Carrier NCDMA, 2.5 MHz Carrier Spacing
1.2288 MHz Channel Bandwidth
PAR = 9.8 dB @ 0.01% Probability (CCDF)
30
5
10
15
20
INPUT
RETURN
LOSS
(dB)
IRL,
IM3
(dBc),
ACPR
(dBc)
25
1990
1980
1970
1960
1950
1940
1930
1920
1910
14
35
13
30
12
25
11
20
10
9
20
8
30
7
40
6
50
200
10
16
1
Pout, OUTPUT POWER (WATTS) PEP
Figure 4. Two-Tone Power Gain versus
Output Power
G
ps
,POWER
GAIN
(dB)
IDQ = 1800 mA
VDD = 28 Vdc, f1 = 1958.75 MHz, f2 = 1961.25 MHz
TwoTone Measurement, 2.5 MHz Tone Spacing
1500 mA
1200 mA
600 mA
900 mA
15
14
13
12
11
10
100
200
60
25
1
IDQ = 1800 mA
Pout, OUTPUT POWER (WATTS) PEP
Figure 5. Third Order Intermodulation
Distortion versus Output Power
VDD = 28 Vdc, f1 = 1958.75 MHz, f2 = 1961.25 MHz
TwoTone Measurement, 2.5 MHz Tone Spacing
10
100
30
40
45
50
55
35
1500 mA
1200 mA
600 mA
900 mA
10
60
20
0.1
3rd Order
TWOTONE SPACING (MHz)
Figure 6. Intermodulation Distortion Products
versus Tone Spacing
INTERMODULA
TION
DIST
O
R
T
ION
(dBc)
IMD,
1
25
30
35
40
45
50
55
5th Order
7th Order
45
48
60
35
Pin, INPUT POWER (dBm)
Figure 7. Pulse CW Output Power versus
Input Power
P
out
,OUTPUT
POWER
(dBm)
36
37
38
39
40
41
42
43
44
59
58
57
56
55
54
53
52
51
50
49
P3dB = 53.11 dBm (205.57 W)
VDD = 28 Vdc, IDQ = 1200 mA
Pulsed CW, 8
μsec (on), 1 msec (off)
f = 1960 MHz
P1dB = 52.54 dBm (179.61 W)
Actual
Ideal
INTERMODULA
TION
DIST
OR
TION
(dBc)
IMD,
THIRD
ORDER
η
D
,DRAIN
EFFICIENCY
(%)
VDD = 28 Vdc, Pout = 130 W (PEP), IDQ = 1200 mA
TwoTone Measurements
(f1 + f2)/2 = Center Frequency of 1960 MHz
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相關代理商/技術參數(shù) |
參數(shù)描述 |
|---|---|
| MRF5S19130HSR5 | 功能描述:射頻MOSFET電源晶體管 HV5 28V26W WCDMA NI880HS RoHS:否 制造商:Freescale Semiconductor 配置:Single 晶體管極性: 頻率:1800 MHz to 2000 MHz 增益:27 dB 輸出功率:100 W 汲極/源極擊穿電壓: 漏極連續(xù)電流: 閘/源擊穿電壓: 最大工作溫度: 封裝 / 箱體:NI-780-4 封裝:Tray |
| MRF5S19130R3 | 制造商:MOTOROLA 制造商全稱:Motorola, Inc 功能描述:N-Channel Enhancement-Mode Lateral MOSFETs |
| MRF5S19130SR3 | 制造商:MOTOROLA 制造商全稱:Motorola, Inc 功能描述:N-Channel Enhancement-Mode Lateral MOSFETs |
| MRF5S19150 | 制造商:MOTOROLA 制造商全稱:Motorola, Inc 功能描述:RF Power Field Effect Transistors |
| MRF5S19150H | 制造商:Freescale Semiconductor 功能描述:L BAND, SI, N-CHANNEL, RF POWER, MOSFET |
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