- 您現(xiàn)在的位置：買賣IC網(wǎng) > PDF目錄96053 > MRF6404 (FREESCALE SEMICONDUCTOR INC) L BAND, Si, NPN, RF POWER TRANSISTOR PDF資料下載
參數(shù)資料
| 型號： | MRF6404 |
| 廠商： | FREESCALE SEMICONDUCTOR INC |
| 元件分類： | 功率晶體管 |
| 英文描述： | L BAND, Si, NPN, RF POWER TRANSISTOR |
| 封裝： | CASE 395C-01, 3 PIN |
| 文件頁數(shù)： | 1/10頁 |
| 文件大?。?/td> | 431K |
| 代理商： | MRF6404 |
AR
C
HIVE
INF
O
RMA
TI
O
N
ARCHIVE
INFORMA
TION
1
MRF6404
MOTOROLA RF DEVICE DATA
The RF Line
NPN Silicon
RF Power Transistor
The MRF6404 is designed for 26 volts microwave large signal, common
emitter, class AB linear amplifier applications operating in the range 1.8 to
2.0 GHz.
Specified 26 Volts, 1.88 GHz Characteristics
Output Power — 30 Watts
Gain — 7.5 dB Min @ 30 Watts
Efficiency — 38% Min @ 30 Watts
Characterized with Series Equivalent Large–Signal Parameters from
1.8 to 2.0 GHz
To be used in Class AB for DCS1800 and PCS1900/Cellular Radio
Gold Metallized, Emitter Ballasted for Long Life and Resistance to Metal
Migration
MAXIMUM RATINGS
Rating
Symbol
Value
Unit
Collector–Emitter Voltage
VCEO
24
Vdc
Collector–Emitter Voltage
VCES
60
Vdc
Emitter–Base Voltage
VEBO
4
Vdc
Collector–Current — Continuous
IC
10
Adc
Total Device Dissipation @ TC = 25°C
Derate above 25
°C
PD
125
0.71
Watts
W/
°C
Storage Temperature Range
Tstg
–65 to +150
°C
Operating Junction Temperature
TJ
200
°C
THERMAL CHARACTERISTICS
Characteristic
Symbol
Max
Unit
Thermal Resistance, Junction to Case (1)
RθJC
1.4
°C/W
ELECTRICAL CHARACTERISTICS (TC = 25°C unless otherwise noted)
Characteristic
Symbol
Min
Typ
Max
Unit
OFF CHARACTERISTICS
Collector–Emitter Breakdown Voltage (IC = 50 mA, IB = 0)
V(BR)CEO
24
29
—
Vdc
Emitter–Base Breakdown Voltage (IE = 10 mAdc)
V(BR)EBO
4
5
—
Vdc
Collector–Base Breakdown Voltage (IC = 50 mAdc)
V(BR)CES
60
68
—
Vdc
Collector–Base Breakdown Voltage (IC = 50 mAdc, RBE = 75 )
V(BR)CER
40
56
—
Vdc
Collector Cutoff Current (VCE = 30 V, VBE = 0)
ICES
—
10
mA
ON CHARACTERISTICS
DC Current Gain (IC = 1 Adc, VCE = 5 Vdc)
hFE
20
50
120
—
(1) Thermal resistance is determined under specified RF operating condition.
Order this document
by MRF6404/D
MOTOROLA
SEMICONDUCTOR TECHNICAL DATA
MRF6404
30 W, 1.88 GHz
RF POWER TRANSISTOR
NPN SILICON
CASE 395C–01, STYLE 1
Motorola, Inc. 1996
REV 3
相關PDF資料 |
PDF描述 |
|---|---|
| MRF6406 | L BAND, Si, NPN, RF POWER TRANSISTOR |
| MRF6409 | UHF BAND, Si, NPN, RF POWER TRANSISTOR |
| MRF6414 | UHF BAND, Si, NPN, RF POWER TRANSISTOR |
| MRF644 | UHF BAND, Si, NPN, RF POWER TRANSISTOR |
| MRF646 | UHF BAND, Si, NPN, RF POWER TRANSISTOR |
相關代理商/技術參數(shù) |
參數(shù)描述 |
|---|---|
| MRF6404K | 制造商:MOTOROLA 制造商全稱:Motorola, Inc 功能描述:RF POWER TRANSISTOR NPN SILICON |
| MRF6408 | 制造商:MOTOROLA 制造商全稱:Motorola, Inc 功能描述:RF POWER TRANSISTOR NPN SILICON |
| MRF6409 | 制造商:MOTOROLA 制造商全稱:Motorola, Inc 功能描述:RF POWER TRANSISTOR NPN SILICON |
| MRF641 | 制造商:Motorola 功能描述:641, TRANSISTOR |
| MRF6414 | 制造商:MOTOROLA 制造商全稱:Motorola, Inc 功能描述:RF POWER TRANSISTOR NPN SILICON |
發(fā)布緊急采購，3分鐘左右您將得到回復。