參數(shù)資料
型號: MRF587
廠商: MOTOROLA INC
元件分類: 小信號晶體管
英文描述: High-Frequency NPN Transistor(高頻率NPN晶體管)
中文描述: UHF BAND, Si, NPN, RF SMALL SIGNAL TRANSISTOR
封裝: CASE 244A-01, 4 PIN
文件頁數(shù): 2/8頁
文件大?。?/td> 155K
代理商: MRF587
MRF587
2
MOTOROLA RF DEVICE DATA
ELECTRICAL CHARACTERISTICS — continued
(TC = 25
°
C unless otherwise noted.)
Characteristic
Symbol
Min
Typ
Max
Unit
DYNAMIC CHARACTERISTICS
Current–Gain — Bandwidth Product (2)
(IC = 90 mAdc, VCE = 15 Vdc, f = 0.5 GHz)
fT
5.5
GHz
Collector–Base Capacitance
(VCB = 10 Vdc, IE = 0, f = 1.0 MHz)
Ccb
1.7
2.2
pF
FUNCTIONAL TESTS
Narrowband — Figure 15
(IC = 90 mA, VCC = 15 V, f = 0.5 GHz)
Noise Figure
Power Gain at Optimum Noise Figure
NF
GNF
11
3.0
13
4.0
dB
Broadband — Figure 16
(IC = 90 mA, VCC = 15 V, f = 0.3 GHz)
Noise Figure
Power Gain at Optimum Noise Figure
NF
GNF
TB3
6.3
11
dB
Triple Beat Distortion
(IC = 50 mA, VCC = 15 V, PRef = 50 dBmV)
(IC = 90 mA, VCC = 15 V, PRef = 50 dBmV)
–70
dB
DIN 45004
(IC = 90 mA, VCC = 15 V)
(IC = 90 mA, VCC = 15 V)
DIN
125
dB
μ
V
Maximum Available Power Gain (3)
(IC = 90 mA, VCE = 15 Vdc, f = 0.5 GHz)
NOTES:
2. Characterized on HP8542 Automatic Network Analyzer
|S21|2
(1
|S11|2)(1
|S22|2)
GUmax
16.5
dB
3. GUmax =
Figure 1. Typical Noise Figure and
Associated Gain versus Frequency
Figure 2. Noise Figure versus Collector Current
10
0.2
0.1
f, FREQUENCY (GHz)
0.3
0.5
0.7
10
G
N
3
0
GNF
VCE = 15 V
IC = 90 mA
9
8
7
6
5
4
3
2
1
0
0.9
6
9
12
15
18
21
24
27
30
50
0
IC, COLLECTOR CURRENT (mA)
N
6
5
4
3
2
1
100
150
200
VCE = 15 V
f = 300 MHz
N.F.
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