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參數(shù)資料
| 型號： | MRF587 |
| 廠商： | MOTOROLA INC |
| 元件分類： | 小信號晶體管 |
| 英文描述： | High-Frequency NPN Transistor(高頻率NPN晶體管) |
| 中文描述： | UHF BAND, Si, NPN, RF SMALL SIGNAL TRANSISTOR |
| 封裝： | CASE 244A-01, 4 PIN |
| 文件頁數(shù)： | 1/8頁 |
| 文件大?。?/td> | 155K |
| 代理商： | MRF587 |
1
MRF587
MOTOROLA RF DEVICE DATA
Motorola, Inc. 1994
The RF Line
. . . designed for use in high–gain, low–noise, ultra–linear, tuned and wideband
amplifiers. Ideal for use in CATV, MATV, and instrumentation applications.
Low Noise Figure —
NF = 3.0 dB (Typ) @ f = 500 MHz, IC = 90 mA
High Power Gain —
GU(max) = 16.5 dB (Typ) @ f = 500 MHz
Ion Implanted
All Gold Metal System
High fT — 5.5 GHz
Low Intermodulation Distortion:
TB3 = –70 dB
DIN = 125 dB
μ
V
Nichrome Emitter Ballast Resistors
MAXIMUM RATINGS
Rating
Symbol
Value
Unit
Collector–Emitter Voltage
VCEO
VCBO
VEBO
IC
PD
17
Vdc
Collector–Base Voltage
34
Vdc
Emitter–Base Voltage
2.5
Vdc
Collector Current — Continuous
200
mAdc
Total Device Dissipation @ TC = 50
°
C
Derate above TC = 50
°
C
5.0
33
Watts
mW/
°
C
Storage Temperature Range
Tstg
TJ
– 65 to +150
°
C
Junction Temperature
200
°
C
ELECTRICAL CHARACTERISTICS
(TC = 25
°
C unless otherwise noted.)
Characteristic
Symbol
Min
Typ
Max
Unit
OFF CHARACTERISTICS
Collector–Emitter Breakdown Voltage
(IC = 5.0 mAdc, IB = 0)
V(BR)CEO
17
—
—
Vdc
Collector–Base Breakdown Voltage
(IC = 1.0 mAdc, IE = 0)
V(BR)CBO
34
—
—
Vdc
Emitter–Base Breakdown Voltage
(IC = 0, IE = 0.1 mAdc)
V(BR)EBO
2.5
—
—
Vdc
Collector Cutoff Current
(VCB = 10 Vdc, IE = 0)
ICBO
—
—
50
μ
Adc
ON CHARACTERISTICS
DC Current Gain (1)
(IC = 50 mAdc, VCE = 5.0 Vdc)
hFE
50
—
200
—
NOTE:
(continued)
1. 300
μ
s pulse on Tektronix 576 or equivalent.
Order this document
by MRF587/D
SEMICONDUCTOR TECHNICAL DATA
NF = 3.0 dB @ 0.5 GHz
HIGH–FREQUENCY
TRANSISTOR
NPN SILICON
CASE 244A–01, STYLE 1
REV 6
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