參數(shù)資料
型號(hào): MRF5711LT1
廠商: MOTOROLA INC
元件分類: 小信號(hào)晶體管
英文描述: NPN Silicon High-Frequency Transistors
中文描述: UHF BAND, Si, NPN, RF SMALL SIGNAL TRANSISTOR
封裝: PLASTIC, CASE 318A-05, 4 PIN
文件頁(yè)數(shù): 1/1頁(yè)
文件大小: 23K
代理商: MRF5711LT1
A D V A N C E D S E M I C O N D U C T O R, I N C.
REV. A
7525 ETHEL AVENUE
NORTH HOLLYWOOD, CA 91605
(818) 982-1200
FAX (818) 765-3004 1/1
Specifications are subject to change without notice.
CHARACTERISTICS
T
C
= 25 °C
SYMBOL
BV
CBO
I
C
= 0.1 mA
BV
CEO
I
C
= 1.0 mA
BV
EBO
I
E
= 500 μA
I
CBO
V
CB
= 8.0 V
h
FE
V
CE
= 5.0 V I
C
= 30 mA
NONE
TEST CONDITIONS
MINIMUM TYPICAL MAXIMUM
20
UNITS
V
10
V
2.5
V
10
μA
50
300
---
C
cb
V
CB
= 6.0 V
f = 1.0 MHz
0.7
1.0
pF
G
NF
V
CE
= 6.0 V
f = 1.0 GHz
I
C
= 10 mA f = 0.5 GHz
10
16.5
12
dB
NF
V
CE
= 6.0 V I
C
= 10 mA f = 0.5 GHz
f = 1.0 GHz
f = 2.0 GHz
1.0
1.5
2.8
2.0
dB
NPN SILICON RF TRANSISTOR
MRF571
DESCRIPTION:
The
ASI
MRF571
is Designed for low-
noise, wide dynamic range front end
amplifiers.
Applications up to 2.0 GHz.
FEATURES:
Low Noise Figure
High Gain
Omnigold
Metalization System
MAXIMUM RATINGS
I
C
V
CBO
V
CEO
V
EBO
P
DISS
T
J
T
STG
70 mA
20 V
10 V
3.0 V
1.0 W @ T
C
= 25 °C
-65 °C to +200 °C
-65 °C to +150 °C
PACKAGE STYLE
Dim. Are in mm
Leads 1 and 3 = Emitter 2 = Collector 4 = Base
相關(guān)PDF資料
PDF描述
MRF572 SILICON NPN RF TRANSISTOR
MRF604 14 pin DIP, 5.0 Volt, HCMOS/TTL, Clock Oscillator
MRF616 14 pin DIP, 5.0 Volt, HCMOS/TTL, Clock Oscillator
MRF627 14 pin DIP, 5.0 Volt, HCMOS/TTL, Clock Oscillator
MRF629 14 pin DIP, 5.0 Volt, HCMOS/TTL, Clock Oscillator
相關(guān)代理商/技術(shù)參數(shù)
參數(shù)描述
MRF5711MLT1 制造商:Microsemi Corporation 功能描述:Trans GP BJT NPN 10V 0.08A 4-Pin(3+Tab) SOT-143 制造商:Microsemi Corporation 功能描述:RF SMALL SIGNAL TRANSISTOR BIPOLAR/HBT 制造商:Microsemi 功能描述:Trans GP BJT NPN 10V 0.08A 4-Pin(3+Tab) SOT-143
MRF572 制造商:ASI 制造商全稱:ASI 功能描述:SILICON NPN RF TRANSISTOR
MRF577T1 制造商:Motorola 功能描述:MOTOROLA S7D9B
MRF581 功能描述:射頻放大器 RF Transistor RoHS:否 制造商:Skyworks Solutions, Inc. 類型:Low Noise Amplifier 工作頻率:2.3 GHz to 2.8 GHz P1dB:18.5 dBm 輸出截獲點(diǎn):37.5 dBm 功率增益類型:32 dB 噪聲系數(shù):0.85 dB 工作電源電壓:5 V 電源電流:125 mA 測(cè)試頻率:2.6 GHz 最大工作溫度:+ 85 C 安裝風(fēng)格:SMD/SMT 封裝 / 箱體:QFN-16 封裝:Reel
MRF581_08 制造商:MICROSEMI 制造商全稱:Microsemi Corporation 功能描述:RF & MICROWAVE DISCRETE LOW POWER TRANSISTORS