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參數(shù)資料
| 型號(hào)： | MRF627 |
| 廠商： | ADVANCED SEMICONDUCTOR INC |
| 元件分類： | 小信號(hào)晶體管 |
| 英文描述： | 14 pin DIP, 5.0 Volt, HCMOS/TTL, Clock Oscillator |
| 中文描述： | UHF BAND, Si, NPN, RF SMALL SIGNAL TRANSISTOR |
| 文件頁數(shù)： | 1/1頁 |
| 文件大?。?/td> | 12K |
| 代理商： | MRF627 |
A D V A N C E D S E M I C O N D U C T O R, I N C.
REV. A
7525 ETHEL AVENUE
NORTH HOLLYWOOD, CA 91605
(818) 982-1200
FAX (818) 765-3004 1/1
Specifications are subject to change without notice.
CHARACTERISTICS
T
C
= 25 °C
SYMBOL
BV
CEO
I
C
= 25 mA
BV
CES
I
C
= 10 mA
BV
EBO
I
E
= 5.0 mA
h
FE
V
CE
= 5.0 V I
C
= 150 mA
NONE
TEST CONDITIONS
MINIMUM TYPICAL MAXIMUM
12
UNITS
V
28
V
4.0
V
20
---
---
C
ob
V
CB
= 12.5 V
f = 1.0 MHz
4.0
pF
P
G
η
C
V
CC
= 12.5 V P
OUT
= 0.5 W f = 470 MHz
13
60
dB
%
NPN SILICON RF POWER TRANSISTOR
MRF627
DESCRIPTION:
The
ASI MRF627
is Designed for
Class C, FM Land Mobile and FM
Base Applications up to 470 MHz.
FEATURES:
Common Emitter
P
G
= 13 dB at 0.5 W/470 MHz
Omnigold
Metalization System
MAXIMUM RATINGS
I
C
0.4 A
V
CBO
28 V
V
CEO
12 V
V
EBO
4.0 V
P
DISS
2.5 W @ T
C
= 25 °C
T
J
-65 °C to +200 °C
T
STG
-65 °C to +150 °C
θ
JC
70 °C/W
PACKAGE STYLE .205 4L PILL
A
B
H
G
E
F
.039 / 1.000
.106 / 2.700
.028 / 0.700
.976 / 24.800
.138 / 3.500
.976 / 24.800
inches / mm
MINIMUM
A
G
F
E
D
C
B
1.00 / 25.400
.047 / 1.200
.139 / 3.400
1.00 / 25.400
MAXIMUM
inches / mm
.031 / 0.800
C
D
H
.004 / 0.100
.200 / 5.100
.006 / 0.150
.208 / 5.300
DIM
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