參數(shù)資料
型號: MRF616
廠商: ADVANCED SEMICONDUCTOR INC
元件分類: 小信號晶體管
英文描述: 14 pin DIP, 5.0 Volt, HCMOS/TTL, Clock Oscillator
中文描述: UHF BAND, Si, NPN, RF SMALL SIGNAL TRANSISTOR
文件頁數(shù): 1/1頁
文件大?。?/td> 12K
代理商: MRF616
A D V A N C E D S E M I C O N D U C T O R, I N C.
REV. A
7525 ETHEL AVENUE
NORTH HOLLYWOOD, CA 91605
(818) 982-1200
FAX (818) 765-3004 1/1
Specifications are subject to change without notice.
CHARACTERISTICS
T
C
= 25
O
C
SYMBOL
BV
CES
I
C
= 5.0 mA
BV
CEO
I
C
= 50 mA
BV
EBO
I
E
= 1.0 mA
h
FE
V
CE
= 5.0 V
TEST CONDITIONS
MINIMUM TYPICAL MAXIMUM
36
UNITS
V
16
V
4.0
V
I
C
= 150 mA
20
---
C
OB
V
CB
= 12.5 V
f = 1.0 MHz
3.5
pF
P
G
η
C
V
CE
= 12.5 V
P
OUT
= 1.0 W f = 470 MHz
10
11
65
dB
%
PACKAGE STYLE .280" 4L PILL
NPN SILICON RF POWER TRANSISTOR
MRF616
DESCRIPTION:
The
MRF616
is Designed for
Common Emitter Class C Amplifier
Applications in 12.5 Volt UHF Mobile
Radios.
FEATURES INCLUDE:
High Gain,
11 DB Typical
Gold Metallization
Emitter Ballasting
MAXIMUM RATINGS
I
C
250 mA
V
CBO
36 V
P
DISS
5.0 W @ T
C
= 25
O
C
-65
O
C to +200
O
C
-65
O
C to +200
O
C
35
O
C/W
T
J
T
STG
θ
JC
MINIMUM
inches / mm
.004 / 0.10
.275 / 6.99
.050 / 1.27
B
C
D
E
F
A
MAXIMUM
inches / mm
.285 / 7.24
.060 . 1.52
.130 / 3.30
.006 / 0.15
1.055 / 26.80
DIM
.220 / 5.59
.230 / 5.84
.118 / 3.00
D
E
F
B
C
A
C
B
E
E
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