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參數(shù)資料
| 型號(hào)： | MRF426 |
| 廠商： | ADVANCED SEMICONDUCTOR INC |
| 元件分類： | 功率晶體管 |
| 英文描述： | HF BAND, Si, NPN, RF POWER TRANSISTOR |
| 封裝： | 0.380 INCH, FM-4 |
| 文件頁數(shù)： | 1/2頁 |
| 文件大?。?/td> | 247K |
| 代理商： | MRF426 |
A D V A N C E D S E M I C O N D U C T O R, I N C.
REV. B
7525 ETHEL AVENUE
NORTH HOLLYWOOD, CA 91605 (818) 982-1200 FAX (818) 765-3004
1/2
Specifications are subject to change without notice.
CHARACTERISTICS T
C = 25 °C
SYMBOL
NONETEST CONDITIONS
MINIMUM TYPICAL MAXIMUM
UNITS
BVCBO
IC = 50 mA
65
V
BVCEO
IC = 50 mA
35
V
BVEBO
IE = 10 mA
4.0
V
ICES
VCE = 28 V
10
mA
hFE
VCE = 5.0 V
IC = 1.0 A
10
200
---
COB
VCB = 30 V
f = 1.0 MHz
80
pF
GP
η
C
IMD3
VCE = 28 V
POUT = 25 W (PEP)
f = 30 MHz
22
35
-30
dB
%
dBc
NPN SILICON RF POWER TRANSISTOR
MRF426
DESCRIPTION:
The
ASI MRF426 is Designed for
high gain amplifier applications up to
30 MHz.
FEATURES:
P
G = 22 dB min. at 25 W/30 MHz
IMD
3 = -30 dBc max. at 25 W(PEP)
Omnigold Metalization System
Available as matched pairs.
MAXIMUM RATINGS
IC
VCBO
65 V
VCEO
35 V
VEBO
4.0 V
PDISS
70 W @ TC = 25 °C
TJ
-65 °C to +200 °C
TSTG
-65 °C to +150 °C
θ
JC
2.5 °C/W
PACKAGE STYLE .380 4L FLG
MINIMUM
inches / mm
.970 / 24.64
B
C
D
E
F
G
A
MAXIMUM
.385 / 9.78
.980 / 24.89
inches / mm
H
.160 / 4.06
.180 / 4.57
DIM
.220 / 5.59
.230 / 5.84
.105 / 2.67
.085 / 2.16
I
J
.240 / 6.10
.255 / 6.48
.785 / 19.94
F
B
G
.125
.125 NOM.
FULL R
D
E
C
H
.112 x 45°
A
I
J
.004 / 0.10
.006 / 0.15
.280 / 7.11
.720 / 18.29
.730 / 18.54
E
C
B
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|---|---|
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| MRF429MP | 制造商:M/A-COM Technology Solutions 功能描述:RF POWER TRANSISTOR BIPOLAR/HBT |
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