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參數(shù)資料
| 型號： | MRF428 |
| 廠商： | ADVANCED SEMICONDUCTOR INC |
| 元件分類： | 功率晶體管 |
| 英文描述： | HF BAND, Si, NPN, RF POWER TRANSISTOR |
| 封裝： | 0.500 INCH, FM-4 |
| 文件頁數(shù)： | 1/1頁 |
| 文件大小： | 15K |
| 代理商： | MRF428 |
A D V A N C E D S E M I C O N D U C T O R, I N C.
REV. A
7525 ETHEL AVENUE
NORTH HOLLYWOOD, CA 91605 (818) 982-1200 FAX (818) 765-3004
1/1
Specifications are subject to change without notice.
CHARACTERISTICS TC = 25 °C
SYMBOL
NONETEST CONDITIONS
MINIMUM TYPICAL MAXIMUM
UNITS
BVCBO
IC = 100 mA
110
V
BVCES
IC = 100 mA
110
V
BVCEO
IC = 100 mA
55
V
BVEBO
IE = 10 mA
4.0
V
ICEO
VCE = 30 V
5.0
mA
ICES
VCE = 60 V
5.0
mA
hFE
VCE = 6.0 V
IC = 1.4 mA
18
43.5
---
Cob
VCB = 50 V
f = 1.0 MHz
200
pF
GP
IMD3
ηηηη
C
VCE = 50 V
ICQ = 100 mA
f = 30 MHz
POUT = 150 W (PEP)
14
37
-30
dB
dBc
%
NPN SILICON RF POWER TRANSISTOR
MRF428
DESCRIPTION:
The
ASI MRF428 is Designed for
high voltage applications up to 30 MHz
FEATURES:
P
G = 14 dB min. at 150 W/30 MHz
IMD
3 = -30 dBc max. at 150 W(PEP)
Omnigold Metalization System
MAXIMUM RATINGS
IC
10 A
VCBO
110 V
VCEO
55 V
VEBO
4.0 V
PDISS
233 W @ TC = 25 °C
TJ
-65
OC to +200 °C
TSTG
-65
OC to +150 °C
θθθθ
JC
0.75 °C/W
PACKAGE STYLE .500 4L FLG
MINIMUM
inches / mm
.220 / 5.59
.720 / 18.28
.125 / 3.18
.245 / 6.22
.970 / 24.64
B
C
D
E
F
G
A
MAXIMUM
.255 / 6.48
.980 / 24.89
.7.30 / 18.54
inches / mm
.230 / 5.84
H
.003 / 0.08
.007 / 0.18
DIM
K
L
I
J
.090 / 2.29
.150 / 3.81
.980 / 24.89
.110 / 2.79
.175 / 4.45
1.050 / 26.67
H
I
K
J
.112x45°
FULL R
C
E
B
G
D
F
A
L
.125 NOM.
.125 / 3.18
.495 / 12.57
.505 / 12.83
.280 / 7.11
E
C
E
B
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相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
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| MRF429MP | 制造商:M/A-COM Technology Solutions 功能描述:RF POWER TRANSISTOR BIPOLAR/HBT |
| MRF430 | 制造商:MOTOROLA 制造商全稱:Motorola, Inc 功能描述:THE RF LINE NPN SILICON RF POWER TRANSISTOR |
| MRF433 | 制造商:MOTOROLA 制造商全稱:Motorola, Inc 功能描述:NPN SILICON RF POWER TRANSISTOR NPN SILICONS |
| MRF4427 | 功能描述:射頻雙極小信號晶體管 RF Transistor RoHS:否 制造商:NXP Semiconductors 配置:Single 晶體管極性:NPN 最大工作頻率:7000 MHz 集電極—發(fā)射極最大電壓 VCEO:15 V 發(fā)射極 - 基極電壓 VEBO:2 V 集電極連續(xù)電流:0.15 A 功率耗散:1000 mW 直流集電極/Base Gain hfe Min: 最大工作溫度:+ 150 C 封裝 / 箱體:SOT-223 封裝:Reel |
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