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參數(shù)資料
| 型號(hào)： | MRF429 |
| 廠商： | ADVANCED SEMICONDUCTOR INC |
| 元件分類： | 功率晶體管 |
| 英文描述： | HF BAND, Si, NPN, RF POWER TRANSISTOR |
| 封裝： | 0.500 INCH, FM-4 |
| 文件頁(yè)數(shù)： | 1/1頁(yè) |
| 文件大小： | 29K |
| 代理商： | MRF429 |
A D V A N C E D S E M I C O N D U C T O R, I N C.
REV. A
7525 ETHEL AVENUE
NORTH HOLLYWOOD, CA 91605 (818) 982-1200 FAX (818) 765-3004
1/1
Specifications are subject to change without notice.
CHARACTERISTICS T
C = 25
OC
SYMBOL
NONETEST CONDITIONS
MINIMUM TYPICAL MAXIMUM
UNITS
BVCBO
IC = 100 mA
100
V
BVCES
IC = 100 mA
100
V
BVCEO
IC = 200 mA
50
V
BVEBO
IE = 10 mA
4.0
hFE
VCE = 5.0 V
IC = 5.0 A
10
80
---
Cob
VCB = 50 V
f = 1.0 MHz
220
300
pF
GP
IMD
η
C
VCE = 50 V
ICQ = 3.3 A
f = 30 MHz
POUT = 150 W (PEP)
13
45
15
-35
-32
dB
dBc
%
NPN SILICON RF POWER TRANSISTOR
MRF429
DESCRIPTION:
The
ASI MRF429 is Designed for
High voltage applications up tp 30
MHz
FEATURES:
P
G = 13 dB min. at 150 W/30 MHz
IMD
3 = -32 dBc max. at 150 W(PEP)
Omnigold Metalization System
MAXIMUM RATINGS
IC
16 A
VCBO
100 V
VCEO
50 V
VEBO
4.0 V
PDISS
233 W @ TC = 25 °C
TJ
-65°C to +200 °C
TSTG
-65 °C to +150 °C
θ
JC
0.75 °C/W
PACKAGE STYLE .500 4L FLG
MINIMUM
inches / mm
.220 / 5.59
.720 / 18.28
.125 / 3.18
.245 / 6.22
.970 / 24.64
B
C
D
E
F
G
A
MAXIMUM
.255 / 6.48
.980 / 24.89
.7.30 / 18.54
inches / mm
.230 / 5.84
H
.003 / 0.08
.007 / 0.18
DIM
K
L
I
J
.090 / 2.29
.150 / 3.81
.980 / 24.89
.110 / 2.79
.175 / 4.45
1.050 / 26.67
H
I
K
J
.112x45°
FULL R
C
E
B
G
D
F
A
L
.125 NOM.
.125 / 3.18
.495 / 12.57
.505 / 12.83
.280 / 7.11
E
C
E
B
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