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參數(shù)資料
| 型號： | MRF454 |
| 元件分類： | 功率晶體管 |
| 英文描述： | 20 A, 25 V, NPN, Si, POWER TRANSISTOR |
| 封裝： | CASE 211-11, 4 PIN |
| 文件頁數(shù)： | 1/3頁 |
| 文件大小： | 90K |
| 代理商： | MRF454 |
The RF Line
NPN Silicon
RF Power Transistor
Designed for power amplifier applications in industrial, commercial and
amateur radio equipment to 30 MHz.
Specified 12.5 Volt, 30 MHz Characteristics —
Output Power = 80 Watts
Minimum Gain = 12 dB
Efficiency = 50%
MAXIMUM RATINGS
Rating
Symbol
Value
Unit
Collector–Emitter Voltage
VCEO
25
Vdc
Collector–Base Voltage
VCBO
45
Vdc
Emitter–Base Voltage
VEBO
4.0
Vdc
Collector Current — Continuous
IC
20
Adc
Total Device Dissipation @ TC = 25°C
Derate above 25
°C
PD
250
1.43
Watts
W/
°C
Storage Temperature Range
Tstg
–65 to +150
°C
THERMAL CHARACTERISTICS
Characteristic
Symbol
Max
Unit
Thermal Resistance, Junction to Case
RθJC
0.7
°C/W
ELECTRICAL CHARACTERISTICS (TC = 25°C unless otherwise noted.)
Characteristic
Symbol
Min
Typ
Max
Unit
OFF CHARACTERISTICS
Collector–Emitter Breakdown Voltage (IC = 100 mAdc, IB = 0)
V(BR)CEO
18
—
Vdc
Collector–Emitter Breakdown Voltage (IC = 50 mAdc, VBE = 0)
V(BR)CES
36
—
Vdc
Emitter–Base Breakdown Voltage (IE = 10 mAdc, IC = 0)
V(BR)EBO
4.0
—
Vdc
ON CHARACTERISTICS
DC Current Gain (IC = 5.0 Adc, VCE = 5.0 Vdc)
hFE
40
—
150
—
DYNAMIC CHARACTERISTICS
Output Capacitance (VCB = 15 Vdc, IE = 0, f = 1.0 MHz)
Cob
—
250
pF
FUNCTIONAL TESTS (Figure 1)
Common–Emitter Amplifier Power Gain
(VCC = 12.5 Vdc, Pout = 80 W, f = 30 MHz)
Gpe
12
—
dB
Collector Efficiency
(VCC = 12.5 Vdc, Pout = 80 W, f = 30 MHz)
η
50
—
%
Series Equivalent Input Impedance
(VCC = 12.5 Vdc, Pout = 80 W, f = 30 MHz)
Zin
—
.938–j.341
—
Ohms
Series Equivalent Output Impedance
(VCC = 12.5 Vdc, Pout = 80 W, f = 30 MHz)
Zout
—
1.16–j.201
—
Ohms
Parallel Equivalent Input Impedance
(VCC = 12.5 Vdc, Pout = 80 W, f = 30 MHz)
—
1.06
1817 pF
—
Parallel Equivalent Output Impedance
(VCC = 12.5 Vdc, Pout = 80 W, f = 30 MHz)
—
1.19
777 pF
—
MRF454
80 W, 30 MHz
RF POWER
TRANSISTOR
NPN SILICON
CASE 211–11, STYLE 1
Order this document
by MRF454/D
SEMICONDUCTOR TECHNICAL DATA
1
REV 1
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相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| MRF454MP | 制造商:M/A-COM Technology Solutions 功能描述:RF POWER TRANSISTOR BIPOLAR/HBT |
| MRF455 | 功能描述:射頻雙極電源晶體管 2-30MHz 60Watts 12.5Volt Gain 13dB RoHS:否 制造商:M/A-COM Technology Solutions 配置:Single 直流集電極/Base Gain hfe Min:40 最大工作頻率:30 MHz 集電極—發(fā)射極最大電壓 VCEO:25 V 發(fā)射極 - 基極電壓 VEBO:4 V 集電極連續(xù)電流:20 A 最大直流電集電極電流: 功率耗散:250 W 封裝 / 箱體:Case 211-11 封裝:Tray |
| MRF455MP | 制造商:M/A-COM Technology Solutions 功能描述:RF POWER TRANSISTOR BIPOLAR/HBT |
| MRF460 | 制造商:ASI 制造商全稱:ASI 功能描述:NPN SILICON RF POWER TRANSISTOR |
| MRF464 | 功能描述:射頻雙極電源晶體管 RF Transistor RoHS:否 制造商:M/A-COM Technology Solutions 配置:Single 直流集電極/Base Gain hfe Min:40 最大工作頻率:30 MHz 集電極—發(fā)射極最大電壓 VCEO:25 V 發(fā)射極 - 基極電壓 VEBO:4 V 集電極連續(xù)電流:20 A 最大直流電集電極電流: 功率耗散:250 W 封裝 / 箱體:Case 211-11 封裝:Tray |
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