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參數(shù)資料
| 型號(hào)： | MRF422MP |
| 廠商： | ADVANCED SEMICONDUCTOR INC |
| 元件分類(lèi)： | 功率晶體管 |
| 英文描述： | 14 pin DIP, 5.0 Volt, HCMOS/TTL, Clock Oscillator |
| 中文描述： | HF BAND, Si, NPN, RF POWER TRANSISTOR |
| 封裝： | 0.500 INCH, FM-4 |
| 文件頁(yè)數(shù)： | 1/1頁(yè) |
| 文件大?。?/td> | 28K |
| 代理商： | MRF422MP |
A D V A N C E D S E M I C O N D U C T O R, I N C.
REV. A
7525 ETHEL AVENUE
NORTH HOLLYWOOD, CA 91605
(818) 982-1200
FAX (818) 765-3004 1/1
Specifications are subject to change without notice.
CHARACTERISTICS
T
C
= 25 °C
SYMBOL
BV
CEO
I
C
= 200 mA
BV
CES
I
C
= 100 mA
BV
CBO
I
C
= 100 mA
BV
EBO
I
E
= 10 mA
I
CES
V
CE
= 28 V
h
FE
V
CE
= 5.0 V I
C
= 5.0 A
NONE
TEST CONDITIONS
MINIMUM TYPICAL MAXIMUM
35
UNITS
V
V
V
V
mA
---
85
85
3.0
20
10
30
120
C
ob
V
CB
= 28 V
f = 1.0 MHz
420
pF
P
out
G
PE
η
IMD
V
CE
= 28 V
f = 30 MHz
150
W
(PEP)
dB
%
dB
V
CC
= 28 V
I
C(max)
= 6.7 A
I
CQ
= 150 mA P
out
= 150 W
(PEP)
f = 30 MHz
10
13
45
-33
NPN SILICON RF POWER TRANSISTOR
MRF422/MP
DESCRIPTION:
The
ASI MRF422
is Designed for 2.0
MHz to 30 MHz, 28 V High Power
Linear Amplifier Applications. For h
FE
Matched Pairs Order
ASI MRF422MP
.
MAXIMUM RATINGS
I
20 A
V
40 V
P
DISS
290 W @ T
C
= 25 °C
T
J
-65 °C to +150 °C
T
STG
-65 °C to +150 °C
θ
JC
0.6 °C/W
PACKAGE STYLE .500 4L FLG
1 = COLLECTOR 3 = BASE
2 & 4 = EMITTER
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相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| MRF426 | 功能描述:射頻雙極電源晶體管 1.5-30MHz 25Watts 28Volt Gain 22dB RoHS:否 制造商:M/A-COM Technology Solutions 配置:Single 直流集電極/Base Gain hfe Min:40 最大工作頻率:30 MHz 集電極—發(fā)射極最大電壓 VCEO:25 V 發(fā)射極 - 基極電壓 VEBO:4 V 集電極連續(xù)電流:20 A 最大直流電集電極電流: 功率耗散:250 W 封裝 / 箱體:Case 211-11 封裝:Tray |
| MRF426MP | 制造商:M/A-COM Technology Solutions 功能描述:RF POWER TRANSISTOR BIPOLAR/HBT |
| MRF427 | 制造商:ASI 制造商全稱(chēng):ASI 功能描述:NPN SILICON RF POWER TRANSISTOR |
| MRF428 | 制造商:M/A-COM Technology Solutions 功能描述:RF POWER TRANSISTOR BIPOLAR/HBT |
| MRF429 | 制造商:M/A-COM Technology Solutions 功能描述:TRANS GP BJT NPN 50V 16A 4PIN CASE 211-11 - Bulk 制造商:M/A-COM Technology Solutions 功能描述:RF POWER TRANSISTOR BIPOLAR/HBT |
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