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參數(shù)資料
| 型號： | MRF466 |
| 廠商： | ADVANCED SEMICONDUCTOR INC |
| 元件分類： | 功率晶體管 |
| 英文描述： | 14 pin DIP, 5.0 Volt, HCMOS/TTL, Clock Oscillator |
| 中文描述： | 6 A, 35 V, NPN, Si, POWER TRANSISTOR |
| 文件頁數(shù)： | 1/1頁 |
| 文件大?。?/td> | 36K |
| 代理商： | MRF466 |
A D V A N C E D S E M I C O N D U C T O R, I N C.
REV. A
7525 ETHEL AVENUE
NORTH HOLLYWOOD, CA 91605
(818) 982-1200
FAX (818) 765-3004 1/1
Specifications are subject to change without notice.
CHARACTERISTICS
T
C
= 25 °C
SYMBOL
BV
CEO
I
C
= 100 mA
BV
CES
I
C
= 100 mA
BV
EBO
I
E
= 1.0 mA
I
CES
V
E
= 28 V
h
FE
V
CE
= 5.0 V I
C
= 0.5 A
NONE
TEST CONDITIONS
MINIMUM TYPICAL MAXIMUM
35
65
4.0
10
UNITS
V
V
V
mA
---
5
80
C
ob
V
CB
= 28 V
f = 1.0 MHz
125
200
pF
G
PE
η
IMD
3
V
CE
= 28 V
P
OUT
= 40 W (PEP)
I
CQ
= 20 mA f = 30 MHz
15
40
19
-40
-30
dB
%
dBc
NPN SILICON RF POWER TRANSISTOR
MRF466
DESCRIPTION:
The
ASI MRF466
is Designed for
power amplifier applications from 2.0
to 30MHz.
FEATURES:
P
G
= 15 dB min. at 40 W/30 MHz
IMD
3
= -30 dBc max. at 40 W
(PEP)
Omnigold
Metalization System
MAXIMUM RATINGS
I
C
V
CBO
V
CEO
P
DISS
T
J
T
STG
θ
JC
6.0 A
65 V
35 V
175 W @ T
C
= 25 °C
-65 °C to +200 °C
-65 °C to +150 °C
1.0 °C/W
PACKAGE STYLE .380 4L FLG
MINIMUM
inches / mm
.970 / 24.64
B
C
D
E
F
G
A
MAXIMUM
inches / mm
.385 / 9.78
.980 / 24.89
H
.160 / 4.06
.180 / 4.57
DIM
.220 / 5.59
.230 / 5.84
.105 / 2.67
.085 / 2.16
I
J
.240 / 6.10
.255 / 6.48
.785 / 19.94
F
B
G
.125
.125 NOM.
FULL R
D
E
C
H
.112 x 45°
A
I
J
.004 / 0.10
.006 / 0.15
.280 / 7.11
.720 / 18.29
.730 / 18.54
E
E
C
B
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