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參數(shù)資料
| 型號(hào)： | MRF427 |
| 廠商： | ADVANCED SEMICONDUCTOR INC |
| 元件分類： | 功率晶體管 |
| 英文描述： | 14 pin DIP, 5.0 Volt, HCMOS/TTL, Clock Oscillator |
| 中文描述： | HF BAND, Si, NPN, RF POWER TRANSISTOR |
| 封裝： | 0.500 INCH, FM-4 |
| 文件頁(yè)數(shù)： | 1/1頁(yè) |
| 文件大?。?/td> | 12K |
| 代理商： | MRF427 |
A D V A N C E D S E M I C O N D U C T O R, I N C.
REV. A
7525 ETHEL AVENUE
NORTH HOLLYWOOD, CA 91605
(818) 982-1200
FAX (818) 765-3004 1/1
Specifications are subject to change without notice.
CHARACTERISTICS
T
C
= 25
°
C
SYMBOL
BV
CBO
I
C
= 100 mA
BV
CES
I
C
= 100 mA
BV
CEO
I
C
= 200 mA
BV
EBO
I
E
= 10 mA
h
FE
V
CE
= 5.0 V I
C
= 500 mA
NONE
TEST CONDITIONS
MINIMUM TYPICAL MAXIMUM
110
UNITS
V
110
V
65
V
4.0
V
15
90
---
C
ob
V
CB
= 50 V
f = 1.0 MHz
60
pF
G
P
IMD
3
V
CE
= 50 V P
OUT
= 25 W
(PEP)
f = 30 MHz
18
20
- 37
-34
dB
dBc
NPN SILICON RF POWER TRANSISTOR
MRF427
DESCRIPTION:
The
ASI MRF427
is Designed for
high voltage applications up to 30 MHz
FEATURES:
P
G
= 18 dB min. at 25 W/30 MHz
IMD
3
= -34 dBc max. at 25 W
(PEP)
Omnigold
Metalization System
MAXIMUM RATINGS
I
C
V
CBO
V
CEO
V
EBO
P
DISS
T
J
T
STG
θ
JC
6.0 A
110 V
65 V
4.0 V
80 W @ T
C
= 25 °C
-65
O
C to +200 °C
-65
O
C to +150 °C
2.19 °C/W
PACKAGE STYLE .500 4L FLG
ORDER CODE: ASI10467
MINIMUM
.220 / 5.59
.720 / 18.28
.125 / 3.18
.245 / 6.22
.970 / 24.64
B
C
D
E
F
G
A
MAXIMUM
.255 / 6.48
.980 / 24.89
.7.30 / 18.54
.230 / 5.84
H
.003 / 0.08
.007 / 0.18
DIM
K
L
I
J
.090 / 2.29
.150 / 3.81
.980 / 24.89
.110 / 2.79
.175 / 4.45
1.050 / 26.67
H
I
K
J
.112x45°
FULL R
C
E
B
G
D
F
A
L
.125 NOM.
.125 / 3.18
.495 / 12.57
.505 / 12.83
.280 / 7.11
E
C
E
B
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